Allicdata Part #: | CPH3114-TL-E-ND |
Manufacturer Part#: |
CPH3114-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 15V 1.5A CPH3 |
More Detail: | Bipolar (BJT) Transistor PNP 15V 1.5A 350MHz 900mW... |
DataSheet: | CPH3114-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 15mA, 750mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 350MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-96 |
Supplier Device Package: | 3-CPH |
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Transistors are widely used components in the industry and are divided into several categories according to their parameters. One of them is Bipolar Junction Transistors (BJT), of which the single type is the most popular. They can be used to amplify signals and switch large currents. In this article, we will focus on CPH3114-TL-E, a single BJT transistor developed by OSRAM, which is widely used in many applications.
The CPH3114-TL-E has a typical breakdown voltage of 200V, a low current amplification factor of 60mA, a maximum power dissipation of 500mW, no second breakdown, and a junction temperature of 150 degrees Celsius. It is a widely used BJT transistor, which has a wide range of application fields, such as power switching, audio and radio frequency amplifiers, computerized control systems, and automotive applications. The CPH3114-TL-E also has a high switching speed and low noise, which makes it suitable for high-frequency applications.
The CPH3114-TL-E has two pins on each side connected to its emitter and base. The base and emitter are connected to the same terminal. When a current is applied to the base, the emitter will be connected to the collector, allowing current to flow between the emitter and collector. The amount of current flowing between the emitter and collector is directly dependent on the amount of current applied to the base, meaning that the base current can control the emitter-collector current. This is the primary working principle of a BJT transistor.
When an alternating current is applied to the base of the CPH3114-TL-E, the current flowing between the emitter and collector will alternate at the same rate as the applied alternating current. This allows for amplification of an input signal, thereby providing the user with an amplified version of the input signal. In addition, the CPH3114-TL-E can be used in high-frequency applications by connecting a resistor in parallel with the transistor to achieve the desired frequency response.
The CPH3114-TL-E is widely used in many applications owing to its high switching speed, low noise, and wide range of operating voltage. Additionally, it can amplify signals and switch large currents, making it suitable for a variety of applications. It is used in power switching, audio and radio frequency amplifiers, computerized control systems, and automotive applications.
In conclusion, the CPH3114-TL-E is a highly functional single BJT transistor developed by OSRAM. It has two pins on each side that are connected to the emitter and base, and the emitter and collector are each connected to the same terminal. When a current is applied to the base, the emitter will be connected to the collector, allowing current to flow between the emitter and collector. This transistor also has a wide range of applications, such as power switching, audio and radio frequency amplifiers, computerized control systems, and automotive applications. It is also capable of amplifying signals and switching large currents, making it a versatile component.
The specific data is subject to PDF, and the above content is for reference
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