Allicdata Part #: | CPH3456-TL-HOSTR-ND |
Manufacturer Part#: |
CPH3456-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 3.5A CPH3 |
More Detail: | N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount 3-CP... |
DataSheet: | CPH3456-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 71 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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CPH3456-TL-H is an N-channel enhancement mode vertical DMOS (V-DMOS) FET transistor that is used in many applications. It is a type of field-effect transistor (FET) that is designed for high power, low-noise applications, and can be used to build switching circuits with low noise and high efficiency.
The CPH3456-TL-H features a low gate threshold voltage and very high current capacity. It is a vertical DMOSFET that has a low gate-to-source capacitance, and the drain-to-source breakdown voltage is typically 48 volts. It is available in various packages and with various gate lengths. The long gate length helps to reduce the effect of gate resistance on the device\'s switching performance, making it ideal for high-speed low-noise applications.
The CPH3456-TL-H can be used in various applications such as motor control, power conversion, and audio power amplifiers. The low gate threshold voltage and low gate-to-source capacitance make it suitable for high-frequency, high-speed applications. It is also suitable for use in low-noise audio applications due to its low-noise performance.
The CPH3456-TL-H operates on the principle of voltage induced charge transfer. Basically, when a voltage is applied to the device\'s gate terminal, a field of electrons is created. These electrons then flow from the source terminal to the drain terminal, creating a current flow. The amount of current that flows through the device is determined by the voltage applied to the gate.
The CPH3456-TL-H is an excellent device for a variety of switching and amplification applications. Its low gate threshold voltage and low gate-to-source capacitance allow it to switch and amplify signals quickly and with low noise. Its vertical DMOS construction helps to reduce drain-to-source voltage drop, and its long gate length reduces the effect of gate resistance on switching performance. The device is well-suited for use in high-power, low-noise applications, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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