Allicdata Part #: | CPH3455-TL-H-ND |
Manufacturer Part#: |
CPH3455-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 35V 3A CPH3 |
More Detail: | N-Channel 35V 3A (Ta) 1W (Ta) Surface Mount 3-CPH |
DataSheet: | CPH3455-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 104 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 186pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | SC-96 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CPH3455-TL-H is an N-Channel Enhancement Mode Field Effect Transistor (FET). It is a single-gate, insulated-gate field effect transistor with a dual N-Channel MOSFET structure, featuring higher breakdown voltage and lower on-resistance than a single MOSFET. It has a very low gate-source capacitance, which makes it well-suited for use in high-frequency applications. It also has a high linear current limit, which makes it suitable for applications requiring high operating performance.
The CPH3455-TL-H offers several advantages compared to previous N-Channel EnchaneMent FETs. First, its maximum junction temperature (Tjmax) is higher, allowing for increased power derating and higher efficiency. Second, it offers a much higher switching frequency, allowing for higher performance in switching applications. Third, it has a significantly lower gate-source capacitance (Cgss) than previous generations, allowing for increased power handling and higher switching speeds.
In terms of its application field, the CPH3455-TL-H is well-suited for a variety of DC and AC applications, including switch-mode power supplies and power amplifier designs. It is also well-suited for use in automotive, telecom, industrial, and medical applications. Because of its low gate-source capacitance and high linear current limit, the CPH3455-TL-H is well-suited for applications that require high power handling or high speed switching. Additionally, it is ideal for use in ultra-low voltage applications.
The CPH3455-TL-H’s working principle revolves around its dual N-Channel MOSFET structure. The two N-Channels are connected in series, so that when the gate voltage is applied, the resulting current flow will be equal across both channels. This allows for a wider range of power handling and switching speeds than a single MOSFET. Furthermore, the CPH3455-TL-H’s low gate-source capacitance allows it to switch quickly, while still providing high efficiency and low power consumption. The CPH3455-TL-H’s high linear current limit also allows it to operate at full current and voltage levels, providing increased safety and reliability.
In summary, the CPH3455-TL-H is a high-performance single-gate FET with a dual N-Channel MOSFET structure. It provides higher switching speeds, higher breakdown voltages, and higher linear current limits than previous generations of FETs. Additionally, it offers improved power handling and thermal performance. Its applications range from DC and AC switching to ultra-low voltage applications. Finally, its working principle revolves around its dual N-Channel MOSFET structure, allowing it to provide improved performance and safety.
The specific data is subject to PDF, and the above content is for reference
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