Allicdata Part #: | CPH3456-TL-WOSTR-ND |
Manufacturer Part#: |
CPH3456-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 3.5A CPH3 |
More Detail: | N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount 3-CP... |
DataSheet: | CPH3456-TL-W Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 71 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The CPH3456-TL-W is a single n-channel enhancement mode vertical DMOS FET (field effect transistor). This type of transistor is used in wide variety of applications, thanks to its small-size, high dielectric strength, low on-resistance, and low gate charge.
The CPH3456-TL-W is a voltage-controlled, vertical DMOS FET that provides a highly efficient, low noise, and low power solution for use in a wide variety of applications. The FET is designed to operate over a wide range of temperatures, making it an ideal choice for use in the automotive, industrial, and medical industries. The CPH3456-TL-W features a high-temperature rating of 150°C, a low-on-resistance of 0.012Ω, and a very low gate charge of just 0.1nC.
The working principle of the CPH3456-TL-W is such that when a voltage is applied to the gate, a current is established between the source and drain terminals. This current is known as the drain-source current or simply the IDS. The amount of current that flows through the drain-source channel can be controlled by adjusting the voltage applied to the gate. By adjusting the gate voltage, the amount of drain-current can be increased or decreased.
The CPH3456-TL-W is widely used for a variety of purposes, including switching applications, current sensing, circuit protection, power control systems, and motor control. This transistor is ideal for use in a wide range of applications, from automotive to industrial and from medical to consumer products. Additionally, the CPH3456-TL-W can be used to perform pulse-width modulation (PWM) control, enabling it to perform high-speed switching operations with low power consumption and maximum efficiency.
In summary, the CPH3456-TL-W is an efficient and reliable single n-channel enhancement mode vertical DMOS FET. This transistor provides a highly efficient and low power solution for use in a wide variety of applications. The FET is designed to operate over a wide range of temperatures, making it an ideal choice for use in the automotive, industrial, and medical industries. Additionally, the CPH3456-TL-W can be used for a variety of purposes, including switching applications, current sensing, circuit protection, power control systems, and motor control.
The specific data is subject to PDF, and the above content is for reference
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