CPH3456-TL-W Allicdata Electronics
Allicdata Part #:

CPH3456-TL-WOSTR-ND

Manufacturer Part#:

CPH3456-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 3.5A CPH3
More Detail: N-Channel 20V 3.5A (Ta) 1W (Ta) Surface Mount 3-CP...
DataSheet: CPH3456-TL-W datasheetCPH3456-TL-W Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 71 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-CPH
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The CPH3456-TL-W is a single n-channel enhancement mode vertical DMOS FET (field effect transistor). This type of transistor is used in wide variety of applications, thanks to its small-size, high dielectric strength, low on-resistance, and low gate charge.

The CPH3456-TL-W is a voltage-controlled, vertical DMOS FET that provides a highly efficient, low noise, and low power solution for use in a wide variety of applications. The FET is designed to operate over a wide range of temperatures, making it an ideal choice for use in the automotive, industrial, and medical industries. The CPH3456-TL-W features a high-temperature rating of 150°C, a low-on-resistance of 0.012Ω, and a very low gate charge of just 0.1nC.

The working principle of the CPH3456-TL-W is such that when a voltage is applied to the gate, a current is established between the source and drain terminals. This current is known as the drain-source current or simply the IDS. The amount of current that flows through the drain-source channel can be controlled by adjusting the voltage applied to the gate. By adjusting the gate voltage, the amount of drain-current can be increased or decreased.

The CPH3456-TL-W is widely used for a variety of purposes, including switching applications, current sensing, circuit protection, power control systems, and motor control. This transistor is ideal for use in a wide range of applications, from automotive to industrial and from medical to consumer products. Additionally, the CPH3456-TL-W can be used to perform pulse-width modulation (PWM) control, enabling it to perform high-speed switching operations with low power consumption and maximum efficiency.

In summary, the CPH3456-TL-W is an efficient and reliable single n-channel enhancement mode vertical DMOS FET. This transistor provides a highly efficient and low power solution for use in a wide variety of applications. The FET is designed to operate over a wide range of temperatures, making it an ideal choice for use in the automotive, industrial, and medical industries. Additionally, the CPH3456-TL-W can be used for a variety of purposes, including switching applications, current sensing, circuit protection, power control systems, and motor control.

The specific data is subject to PDF, and the above content is for reference

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