CPH3459-TL-W

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CPH3459-TL-W is a N-Channel MOSFET, a type of Field Effect Transistor (FET). It is typically used in a wide variety of applications and can be used as a switch or a voltage-controlled resistor. This transistor has a small footprint and low power consumption, making it an excellent choice for many applications. In this article, we will discuss the application field and working principle of the CPH3459-TL-W MOSFET.

The CPH3459-TL-W MOSFET is a type of switching device that is used for a variety of electronic purposes, such as load switching, audio switching, and motor starting and stopping. Because of its small size and low power consumption, the CPH3459-TL-W MOSFET is suitable for use in a variety of applications, including logic gates, microcontroller programming, automotive electronics, and more. By connecting them with other components, they can turn electrical signals into a variety of other useful signals.

The CPH3459-TL-W MOSFET is a three-terminal device that has an input gate, a drain, and a source. The gate is the control terminal of the transistor and is used to control the current flow between the drain and the source. When a voltage is applied to the gate, it will cause the flow of current to be turned on or off, depending on the state of the gate. The drain and the source are connected to the load and the power supply, respectively. As the gate voltage increases, the resistance between the drain and the source decreases, allowing more current to flow through the load.

The working principle of the CPH3459-TL-W MOSFET is based on the unique properties of a MOSFET device. As the gate voltage increases, the resistance between the drain and the source decreases, allowing more current to flow through the load. This is made possible because the gate voltage operates on the principle of the "Schottky Effect", which is based on the difference between the P-type and N-type semiconductor materials.

When the voltage is applied to the gate terminal, a depletion region is formed between the P-type material and the N-type material. This depletion region acts as a barrier and prevents the current from flowing from the drain to the source. By changing the voltage applied to the gate terminal, the depletion region can be made larger or smaller, thus controlling the amount of current that is allowed through the circuit.

In addition to its use as a switch, the CPH3459-TL-W MOSFET can also be used as a voltage controlled resistor. This application is found in circuits such as audio amplifiers where the resistance of the MOSFET can be changed to reduce the output of the amplifier.

The CPH3459-TL-W MOSFET is an ideal choice for many applications because of its small size and low power consumption. Its three-terminal design allows it to be used in a variety of different applications, such as logic gates, microcontroller programming, automotive electronics, and more. The MOSFET’s working principle is based on the Schottky Effect which allows it to be used as a switch or a voltage controlled resistor. As a result, the CPH3459-TL-W MOSFET is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference