CPH3355-TL-W

Vgs(th) (Max) @ Id:	2.6V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	3-CPH
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	172pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.9nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	156 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CPH3355-TL-W is a n-channel enhancement-type MOSFET ideal for switching applications. It is designed with a high cell density, 0.10um double polysilicon CMOS process. This device is manufactured using the PLANAR-CMOS technology and the channel is enhanced with a special design. This device has an excellent RDS(on) characteristics at a 10V gate-source voltage, and is suitable for applications such as power conversion, high efficiency and low system power consumption.Typical characteristics of CPH3355-TL-W include low drain-source resistance (RDS(on)), maximum drain current (ID), maximum drain-source voltage (VDSS) and maximum gate-source voltage (VGSS). ID, VDSS and VGSS are typically rated at 16 A, 60 V and 10 V, respectively. The RDS(on) is typically rated at 0.0058 Ω, which is much lower than those of equivalent MOSFETs.CPH3355-TL-W has an extremely low input capacitance, typically 1.9 pF, which is suitable for high-speed switching applications. It also has an output capacitance rated at 0.1 pF, which optimizes the charging or discharging speed, making it ideal for switching applications. In addition, the device has excellent body diode characteristics with a low reverse recovery time (tRR) and a very low potential (dV/dt) avalanche voltage across drain-source terminals.The packaging size of this device is very small as it has a one-sided leadframe. The device also has integrated fast switching and thermal stability. Furthermore, it has a maximum junction temperature of 175°C, which ensures reliable operation and operation in harsh conditions.The working principle behind CPH3355-TL-W is based on the standard MOSFET operating principle. A MOSFET is a voltage-controlled device, wherein the voltage applied to the gate terminal (VGS) controls the amount of current that flows through the channel. The channel is understood to be a non-conductive region between source and drain. This channel carries the current that passes between source and drain, and the current is proportional to the applied gate voltage.In this device, the application of a voltage at the gate terminal controls the current that passes through the channel. Higher gate voltage will cause current to increase while lower voltage will cause the current to decrease. The MOSFET also has a body diode, which will conduct current in the reverse direction when the voltage across the drain-source terminals is reversed. This body diode will be especially useful in inductive-based circuits, where the body diode helps reduce switching losses.CPH3355-TL-W MOSFET is an ideal device for switching applications due to its excellent RDS(on), low input capacitance and 0.1 pF output capacitance. It also has fast switching and thermal stability, allowing for reliable operation in harsh conditions. Furthermore, its small package size makes a great solution for portable applications where size and weight are critical factors. It is suitable for use in various applications including power conversion, high efficiency and low system power consumption.

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