CPH3122-TL-E Allicdata Electronics
Allicdata Part #:

CPH3122-TL-E-ND

Manufacturer Part#:

CPH3122-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 3A CPH3
More Detail: Bipolar (BJT) Transistor PNP 30V 3A 420MHz 900mW S...
DataSheet: CPH3122-TL-E datasheetCPH3122-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 420MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH
Description

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The CPH3122-TL-E is a type of single bipolar junction transistor (BJT). These BJT’s are used in a wide range of applications and can be divided into two categories, PNP and NPN. In general, NPN BJT’s are more commonly used than their PNP counterparts due to their higher gain and better noise immunity.

The CPH3122-TL-E is a NPN BJT with a collector-emitter rating of 55V and a collector-emitter saturation voltage of 1.1V. It has a current gain of 300, a breakdown voltage of 40V, a maximum power dissipation of 300mW, and a storage temperature range of -55 to +150 degrees Celsius. To maximize the performance of this device, the collector-emitter voltage should not exceed 55V during operation.

The CPH3122-TL-E is typically used in applications where low noise, high gain, and low input resistance are essential. Its low noise performance makes it ideal for amplifying weak signal levels in signal conditioning applications, while its high gain provides excellent feedback precision. Its low input resistance is useful for providing reasonably accurate signal sampling and high-frequency amplification.

The CPH3122-TL-E is an NPN BJT with an intrinsic structure consisting of three regions: the emitter region, the base region, and the collector region. When operating in the active region, an electrical current passes from the emitter to the collector via the base region. This current flow is regulated by the thre-terminal biasing scheme, which typically consists of a base-emitter resistor and a base-collector resistor. The voltage difference between the collector and emitter is known as the collector-emitter voltage, and is responsible for controlling the current flow.

The electrical current flow through the NPN BJT is known as forward current, or collector current; this is the primary output from the device. In order for a transistor to be effective, its current flow must be in balance with the base-emitter resistor that is controlling it. This balance is necessary to produce the desired signal current and voltage levels, which can be tailored to suit a wide range of applications.

In addition to signal conditioning devices, the CPH3122-TL-E is commonly used in linear voltage regulators, switching power supplies, audio amplifiers and other consumer electronics. Its dynamic current range makes it suitable for various load and input conditions, and its low power dissipation makes it energy efficient.

The CPH3122-TL-E is a reliable, low-cost NPN BJT for a variety of applications. Its low noise and high gain characteristics make it an ideal choice for amplifier and signal conditioning applications, while its Low input resistance makes it suitable for precise signal sampling and high-frequency amplification. Its dynamic current range and ability to tolerate a wide variety of input conditions make it a popular choice for semiconductor devices.

The specific data is subject to PDF, and the above content is for reference

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