CPH3351-TL-H Allicdata Electronics
Allicdata Part #:

CPH3351-TL-HOSCT-ND

Manufacturer Part#:

CPH3351-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 1.8A CPH3
More Detail: P-Channel 60V 1.8A (Ta) 1W (Ta) Surface Mount 3-CP...
DataSheet: CPH3351-TL-H datasheetCPH3351-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-CPH
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The CPH3351-TL-H is a field-effect transistor (FET) in the Single Mosfet category. It is an N-Channel Metal Oxide Semiconductor FET (MOSFET) designed for universal gate drive applications. As such, it is suitable for applications in most digital circuits, as well as power switching, in-circuit testing, and protection. It is also suitable for Pulse-width modulation (PWM) control, power amplifiers, and load switching.

The CPH3351-TL-H is based on advanced MOSFET technology, which allows it to achieve excellent performance and achieve low on-resistance and low gate-charge. It is capable of providing high voltage and power ratings, up to 500V and up to 1.53W. It also has a wide range of operating temperatures, from -55°C to 175°C.

The working principle of a FET is similar to that of a transistor, with an electric field from the gate controlling current between the source and the drain. It is a voltage-controlled, current-conducting circuit element, which is capable of amplifying signals. The gate works by changing the electric field inside the device, which alters the channel resistance and thus the channel current. This channel current is what then passes from the source to the drain.

To better understand how the CPH3351-TL-H works, it is important to look at its basic structure and components. At the core of the device is the channel, which is formed between the source and the drain, and the gate, which is the control element. The source is usually connected to ground, and the drain is connected to the output circuit. The gate, when voltage is applied to it, creates a strong electric field around itself, which changes the channel resistance and thus the amplitude of the output signal.

The CPH3351-TL-H uses an advanced process technology, which allows it to keep its on-resistance low, and its gate charge low. It is also very reliable, and capable of operating within the specified temperature range. When used in the proper application, it provides low gate-charge, low on-resistance, and excellent performance and reliability.

In summary, the CPH3351-TL-H is a Single Mosfet in the FET family, and is designed for use in universal gate drive applications. It is based on advanced MOSFET technology, which allows it to have excellent performance and low on-resistance, and gate charge. It is suitable for most digital circuit applications, as well as power switching, in-circuit testing, and protection. It is also great for use in PWM control, power amplifiers, and load switching. With its advanced process technology, the CPH3351-TL-H is a reliable, low on-resistance, low gate-charge FET, which is suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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