CPH3355-TL-H

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The CPH3355-TL-H MOSFET is a fully-enhancement type, P-channel, vertical-DMOS FET constructed with Fairchild Semiconductor’s advanced power MOSFET technology. This device is designed specifically for RF and high-current applications.

The CPH3355-TL-H has a wide range of application fields, ranging from motor control, inverter control and AC/DC converters to switching regulator control. It could also be used in RF power amplifier stages, current-sensing of Li-ion batteries, lamps and LED drivers, automotive power steering systems and heating element control.

The CPH3355-TL-H is a vertical-DMOS FET, working on the principle of a three-terminal voltage-controlled device. It depends on the gate-to-source voltage (VGS) to produce the switching action and to regulate the drain current. Operating as a field-effect transistor (FET) when a voltage is applied to the Gate terminal in relation to the Source terminal, electrons are attracted or repelled, corresponding to negative and positive voltages respectively. This changes the conductivity of the source-drain path according to the voltage at the Gate terminal.

The CPH3355-TL-H has an average on resistance of 25 mOhm @ VGS = 10V and an RDS(ON) of 22 mOhm @ VGS = 3.6V. It features a low threshold of 1.2V and a maximum operating temperature of 175°C, with a Drain-Source breakdown voltage of 175V.

These outstanding characteristics make CPH3355-TL-H an ideal choice for a variety of applications that require low on-resistance, high power dissipation and fast switching speeds. It provides a 40A continuous drain current and a pulsed drain current of 400A. Its high transient burst allows for a fast response time even under severe thermal stress.

The CPH3355-TL-H MOSFET offers a robust thermo-mechanical design to meet the demands of various performance requirements. It is built with Fairchild Semiconductor’s advanced vertical DMOS technology and is paired with a dedicated output gate driver IC to maximize efficiency.

The CPH3355-TL-H MOSFET provides a wide range of features that make it an ideal choice for applications that need low on resistance, high power dissipation, and fast switching speeds. Its wide range of application fields, low threshold voltage, high current capability, high reliability, and robust thermomechanical design make it an attractive choice for today’s diverse and demanding industrial needs.

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