CY7C199D-10VXIT Allicdata Electronics
Allicdata Part #:

428-3820-2-ND

Manufacturer Part#:

CY7C199D-10VXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: CY7C199D-10VXIT datasheetCY7C199D-10VXIT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: CY7C199
Description

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CY7C199D-10VXIT is an integrated semiconductor memory device with 10K x 8 bit organization. It is a CMOS control asynchronous static RAM which is organized based on 8, 9 and 10 bit data per memory cell for a variety of architecture options. It is designed for high-density, low-power applications and has the potential to revolutionize the industry with its high-speed, low-power operation.

This type of memory is often used as a main memory in a microcontroller, for fast access memory or as a buffer for large data sets in consumer electronics products or in industrial automation. With its high-speed, low-power operation, CY7C199D-10VXIT offers efficient performance in various electronics applications.

At its core, the CY7C199D-10VXIT combines a memory array and a control circuit. The memory array consists of 8, 9 or 10 bit per cell registers that are scanned in a manner based on the input/output timing of the memory circuit. The memory array also includes internal decode logic that is used to decode the address as well as storage devices to store the data. The control circuit integrates the various registers, latches, and other circuitry necessary to control the memory array.

The CY7C199D-10VXIT is designed to detect the address and output data in parallel to the desired address. It is designed to operate from 0.45V to 4.5V and can be used in different applications parameters ranging from 4MHz up to 100MHz for multiple operational frequencies. It consumes extremely low power and provides a maximum operation of up to 35mA. This is why it is such a popular device in a wide range of applications.

The CY7C199D-10VXIT memory is typically used for storing data and program code for microcontrollers, DSPs, microprocessors, and embedded systems where large capacity and fast access are desired. It is an ideal choice for automotive applications and control systems where high speed operations have to be combined with low power consumption. This is why it is often found in many consumer and industrial products such as digital cameras, medical devices, printers, wireless gadgets, and more.

The most important feature of the CY7C199D-10VXIT is its asynchronous operation. This means that it can operate at different rates, depending on the demand of the application. The device also allows for direct and asynchronous access to memory, as well as allowing for a single-chip solution for memory access.

The CY7C199D-10VXIT is a very versatile type of memory, due to its high-speed, low-power operation, and wide range of operational frequencies. It is ideal for applications where high speed, low power consumption, and large capacity are desired. Due to its asynchronous operation, it provides flexible access to memory and is a great choice for applications where performance needs to be optimized. It is an excellent choice for many consumer and industrial products such as digital cameras, medical devices, printers, wireless gadgets, and more.

The specific data is subject to PDF, and the above content is for reference

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