CY7C1318KV18-250BZCT Allicdata Electronics
Allicdata Part #:

CY7C1318KV18-250BZCT-ND

Manufacturer Part#:

CY7C1318KV18-250BZCT

Price: $ 13.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18...
DataSheet: CY7C1318KV18-250BZCT datasheetCY7C1318KV18-250BZCT Datasheet/PDF
Quantity: 1000
1000 +: $ 12.34520
Stock 1000Can Ship Immediately
$ 13.58
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1318
Description

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CY7C1318KV18-250BZCT is a high performance static random access memory (SRAM) controller designed to provide users with a high performance interface to memory devices. It has been designed specifically to satisfy the demanding requirements of today\'s embedded applications.

The main features of the CY7C1318KV18-250BZCT are its 2Gb/second operating speed, its advanced static random access memory (SRAM) architecture, and its configurable data width of 8-bit, 16-bit and 32-bit. It also features support for multiple clock speeds and flexible I/O control.

In terms of its application field, the primary areas that the CY7C1318KV18-250BZCT can be used in include embedded systems, communications and networking, consumer electronics, industrial automation, and medical and aerospace applications.

Its working principle involves the use of a memory device to store data. The memory device, for example a DRAM, is organized into cells. Each cell can store one bit. The memory controller acts as an interface between the memory device and the system. It is able to read from and write to the memory device. The system can access data from the memory device through the memory controller.

The CY7C1318KV18-250BZCT has been designed to offer a high throughput, low power solution for applications where the need for power-efficient memory access is critical. The device can perform fast and reliable read/write operations, and its configurable data width enables it to be used for a variety of applications.

Furthermore, the CY7C1318KV18-250BZCT offers software programmable features to optimize performance, such as accessing data buffers, allowing for data transfers between the controller and the memory devices. It allows users to configure and enable features such as read/write enable mode, refresh mode, start and end count registers, and access enable functions, providing flexibility to accommodate various application requirements.

In conclusion, the CY7C1318KV18-250BZCT is a high performance static random access memory (SRAM) controller designed to offer users a high performance interface to memory devices. Its main features include its 2Gb/second operating speed, its advanced SRAM architecture, and its configurable data width. Additionally, its versatile application field enables it to be used in embedded systems, communications, networking, consumer electronics, industrial automation, and medical and aerospace applications. Lastly, its software programmable features allow users to optimize performance, making it an ideal solution for applications where the need for power-efficient memory access is of key importance.

The specific data is subject to PDF, and the above content is for reference

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