CY7C1250KV18-400BZC Allicdata Electronics
Allicdata Part #:

CY7C1250KV18-400BZC-ND

Manufacturer Part#:

CY7C1250KV18-400BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II+ Memory IC 36Mb (1M x 3...
DataSheet: CY7C1250KV18-400BZC datasheetCY7C1250KV18-400BZC Datasheet/PDF
Quantity: 113
Stock 113Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 36Mb (1M x 36)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1250
Description

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The CY7C1250KV18-400BZC is a medium density SRAM chip designed by Cypress Semiconductor. It is a member of Cypress\' embedded SRAM family. The device is an 8K memory array optimized for low-power and low-cost applications. It offers an improved operating speed and increased reliability over previous generations of SRAMs. The CY7C1250KV18-400BZC is available in 28-pin Plastic DIP or SOIC package.

This SRAM chip is usually used in telecom, industrial and consumer applications. Its wide range of applications include data storage, battery-backed cache, image processing, and automotive applications. This device is designed to replace 8K x 8 memory designs using low-power static RAMs (LP-SRAM) for better performance and power efficiency. It also provides design flexibility with its support for various interface standards such as I2C, SPI and serial clock/data.

The CY7C1250KV18-400BZC offers an operating speed of 400 MHz with an access time of 18 ns. It operates from a single +5V supply and is available in a standard 28-pin packages. It is specifically designed for low power consumption, achieving a power dissipation of 2.4 mW/MHz of average access time. The device also features hardware encryption for increased security as well as a failsafe design with power-up protection ensuring that data is not lost in the event of a power outage.

This device works on the asynchronous SRAM technology. It consists of an 8K x 8 memory array which is connected to an address decoder, read/write logic, and output data latch. A row address is loaded into the address decoder through an input register which enables it to read, write and refresh the memory array. The refresh logic is used to maintain data integrity. The read logic takes the row address and provides data to the output data latch. The write logic takes the row address and data to be written from the output data latch. Then, it is written into the memory array.

The CY7C1250KV18-400BZC is a reliable, low-power, high-performance SRAM chip that is ideal for variety of memory-intensive applications. It provides a fast access time of 18 ns as well as a high clock rate of 400 MHz. It also provides increased security and data integrity through its hardware encryption and failsafe design. Finally, its small form factor makes it suitable for applications in consumer, industrial and telecom industries.

The specific data is subject to PDF, and the above content is for reference

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