| Allicdata Part #: | CY7C1019DV33-10BVXIT-ND |
| Manufacturer Part#: |
CY7C1019DV33-10BVXIT |
| Price: | $ 1.67 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 1M PARALLEL 48VFBGA |
| More Detail: | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral... |
| DataSheet: | CY7C1019DV33-10BVXIT Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 1.51759 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 1Mb (128K x 8) |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-VFBGA |
| Supplier Device Package: | 48-VFBGA (6x8) |
| Base Part Number: | CY7C1019 |
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The CY7C1019DV33-10BVXIT is a non-volatile RAM memory device used for a wide variety of applications. It is a low-power, low-cost device capable of providing high reliability and performance.
The CY7C1019DV33-10BVXIT is designed to operate in a slow clock mode while its four cells contain data. It uses a dual port RAM technology to optimize its power draw and control latency between read and write cycles. The device features asynchronous read and write operations, allowing the device to start new operations before the previous has completed. This allows the RAM to be accessed quickly and reliably.
CY7C1019DV33-10BVXIT is ideal for use in applications where frequent operations must be conducted, such as medical, automotive, telecom and industrial control systems. The device is available in an 8-pin SOIC package, making it easy to integrate into a wide range of applications. It is also pin- and code-compatible with many other RAM devices, giving it the flexibility to be used in many different designs.
CY7C1019DV33-10BVXIT\'s working principle is based on the concept of non-volatile RAM, or NVRAM. In NVRAM, the data is stored in four memory cells, each capable of holding a single bit of data. The data is also stored in a static RAM structure, similar to traditional DRAM memories, but the data is not subject to the same effects that can cause data loss in DRAM. The memory cells are capable of holding their data, even when power is removed, allowing the memory to be used again when the power is restored.
For the write cycles, the CY7C1019DV33-10BVXIT uses a single cycle write command. This allows the device to be more efficient in write operations, allowing it to store up to 32 bits of data in a single write cycle. The device is also capable of executing a burst read, allowing data to be read out of the memory in a continuous stream.
Partitioning of the memory is also supported by the CY7C1019DV33-10BVXIT, allowing different areas of the memory to be designated for different types of storage and access. The device also supports a wide range of error checking and correction techniques, such as parity and ECC, making it an excellent choice for applications where reliability is essential.
The CY7C1019DV33-10BVXIT is a non-volatile RAM memory device that is suitable for a wide range of applications. It features a powerful combination of features, including low power consumption, low cost, and high reliability, making it an excellent choice for many applications. Its low latency and asynchronous operations make it ideal for medical, automotive, telecom, and industrial control. Its support for error checking and correction techniques make the device a good choice for applications where reliability is essential.
The specific data is subject to PDF, and the above content is for reference
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CY7C1019DV33-10BVXIT Datasheet/PDF