CY7C1041CV33-12ZSXET Allicdata Electronics
Allicdata Part #:

CY7C1041CV33-12ZSXET-ND

Manufacturer Part#:

CY7C1041CV33-12ZSXET

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY7C1041CV33-12ZSXET datasheetCY7C1041CV33-12ZSXET Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY7C1041
Description

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The CY7C1041CV33-12ZSXET is a device from Cypress Semiconductor. It is part of their True Non-Volatile Memory (nvSRAM) product line. The CY7C1041CV33-12ZSXET is a dual-port provided Memory component designed for high-speed and low-power applications. The device is manufactured using the latest CMOS and copper wire bond technology and is optimized for use in a wide range of embedded systems.

The CY7C1041CV33-12ZSXET provides up to 1Mbit of True NvSRAM storage capacity with a high data retention and read/write cycle times of up to 5 ns. The device also features a low standby power consumption of only 2.0 mW. The CY7C1041CV33-12ZSXET also provides a wide operating temperature range, from -40°C to +125°C, and is specified for a wide range of industrial and military applications.

The primary application of the CY7C1041CV33-12ZSXET includes, but is not limited to, portable multi-media devices, gaming systems, industrial automation systems, and remote sensing stations. The device can also be used in applications such as telemetric systems and medical diagnostic equipment. Additionally, it can be used in conjunction with other memory components to create high-speed, low-power communication networks.

The working principle of the CY7C1041CV33-12ZSXET is based on the use of static random-access memory (SRAM). SRAM is a type of volatile memory which requires a continuous power supply to retain its data. The 2Mbit of True NvSRAM provided by the device is capable of maintaining its data even when the power supply is removed. In addition, the high data retention and low standby power consumption of the device make it suitable for a wide range of industrial and military applications.

The CY7C1041CV33–12ZSXET features a dual-port supplied NvSRAM memory device with a write-through command and a read/write cycle time of 5 ns. It is manufactured using the latest CMOS process and copper wire-bonding technology, and utilizes a wide range of additional features to enhance performance. The device is available in a wide range of packages and pin-outs, each providing an optimal level of performance and compatibility with a variety of systems.

The CY7C1041CV33-12ZSXET is an ideal choice for a variety of high-speed, low-power applications. It provides a reliable, high-speed, low-power memory solution, with a wide variety of features and capabilities. The device is capable of maintaining its data even when the power supply is removed, and its wide operating temperature range makes it suitable for a variety of industrial and military applications. With its combination of features and performance, the CY7C1041CV33-12ZSXET makes an excellent choice for a wide variety of embedded systems.

The specific data is subject to PDF, and the above content is for reference

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