CY7C1472BV25-200BZIT Allicdata Electronics
Allicdata Part #:

CY7C1472BV25-200BZIT-ND

Manufacturer Part#:

CY7C1472BV25-200BZIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous Memory IC 72Mb (4M x 18) Parall...
DataSheet: CY7C1472BV25-200BZIT datasheetCY7C1472BV25-200BZIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C1472
Supplier Device Package: 165-FBGA (15x17)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375 V ~ 2.625 V
Memory Interface: Parallel
Access Time: 3ns
Series: NoBL™
Clock Frequency: 200MHz
Memory Size: 72Mb (4M x 18)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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CY7C1472BV25-200BZIT Application Field and Working Principle

The CY7C1472BV25-200BZIT is a 256-kbit low-power static random access memory (SRAM). This device is the successor of the previous generation two-transistor single port SRAM family and is sized at 3.3V.

The CY7C1472BV25-200BZIT family is designed to provide maximum flexibility and performance in system design while consuming a minimal amount of power. Designed to support a wide range of application needs from data storage to program execution, this device is best suited for applications such as communication, instrumentation, medical equipment, automotive, and industrial automation.

Features of the CY7C1472BV25-200BZIT

  • Low-power operation for battery-powered and energy-saving designs
  • 5-V asynchronous TTL/CMOS compatible address, data I/O and control pins
  • Wide range of access times from 15 ns to 70 ns
  • Low-power CMOS design
  • Standard 22-pin 400 mil narrow SOIC packaging
  • Advanced pin lifecycle timer to reduce system power consumption

Working Principle

The CY7C1472BV25-200BZIT SRAM has two flexible operation modes, low-power and high-speed rush mode. In low-power mode, the device is operated at a constant speed as determined by the selected access time. In rush mode, the device is operated at maximum speed for the selected access time. The high-speed rush mode can be enabled or disabled by an external control signal.

The CY7C1472BV25-200BZIT SRAM features a Cache Memory Bank that acts as a pseudo-memory to speed up read/write cycles. Data is stored in the Cache Memory Bank, allowing it to be accessed in a fraction of the time it would normally take for a read/write operations. Additionally, the device incorporates a RAM Control Register that can be used to monitor the Cache Memory Bank activity, access times, and control write operations.

Conclusion

The CY7C1472BV25-200BZIT is an ideal low-power memory solution for applications in communication, instrumentation, medical equipment, automotive, and industrial automation. It offers flexibility, reduced power consumption, and high-speed rush mode operation for faster data access times. Its cache memory bank and RAM control register further enhances its performance for optimal system operations.

The specific data is subject to PDF, and the above content is for reference

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