CY7C1312KV18-250BZXC Allicdata Electronics
Allicdata Part #:

428-3298-ND

Manufacturer Part#:

CY7C1312KV18-250BZXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18...
DataSheet: CY7C1312KV18-250BZXC datasheetCY7C1312KV18-250BZXC Datasheet/PDF
Quantity: 138
Stock 138Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1312
Description

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CY7C1312KV18-250BZXC is a memory fabricated with a highly advanced 0.18um process from Cypress Semiconductor Corporation, which can meet the needs of users for high-speed data transmission and low power consumption. It has a wide range of applications in many industries, such as automotive, mobile devices, Wearable Technology, Industrial, Medical and Networking applications.

CY7C1312KV18-250BZXC offers a wide range of features including multiple Single-Ported SRAM and Dual-Ported SRAM interface options, low power consumption and high speed operation. It is designed to provide higher performance than similar devices in the market as well as a smaller footprint and reduced power consumption. The CY7C1312KV18-250BZXC provides easy-to-use software tools and optimized memory architecture, enabling efficient design of reliable and cost-effective systems.

The working principle of CY7C1312KV18-250BZXC is based on a simple concept of writing and reading data from SRAM memory. A CPU or Application-Specific Integrated Circuit (ASIC) is used as the main interface to the SRAM memory, which allows the writes and reads to occur. The writes to the memory are done through an I/O interface which then stores the data to the memory map. The reads from the memory occur when the CPU or ASIC requests the data from the memory, which then retrieves the data from the memory map and sends the data back to the CPU.

The CY7C1312KV18-250BZXC also features a scalable architecture which enables the design engineer to deploy the right combination of Single-Ported SRAM and Dual-Ported SRAM memory, as required. This allows for optimized system performance and power consumption to be achieved. The CY7C1312KV18-250BZXC is suitable for applications which require high speed data transfer, reliable operation and low power consumption. It is also suitable for use in applications which require the flexibility to change the amount of memory available, such as providing memory scaling or expansion when the amount of data needs to be increased.

CY7C1312KV18-250BZXC is an advanced memory solution for applications requiring high speed data transfer and low power consumption. It is ideal for use in a wide range of industries including automotive, mobile devices, Wearable Technology, Industrial, Medical and Networking applications. It is also suitable for use in applications where the amount of data needs to be dynamically scaled and/or expanded, and for applications which require reliable operation in high speed data transfer.

The specific data is subject to PDF, and the above content is for reference

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