CY7C1262XV18-450BZXC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY7C1262XV18-450BZXC is a memory device in the category of dense memory products manufactured by Cypress Semiconductor. Cypress Semiconductor is a renowned American manufacturer of semiconductor systems and integrated circuits. This product belongs to a class of semiconductor memory devices called SRAMs or Static Random Access Memories. These are high performance, low power, non-volatile, high-density Flash memory devices.

CY7C1262XV18-450BZXC has a capacity of 1Million bits and operates at an access time of 18ns. It is designed to provide an easy path to transition existing designs from other existing SRAM devices. The device offers both a synchronous and asynchronous pin-compatible compatibility with a wide selection of existing devices, including Cypress Semiconductor\'s CY7C128-010C, CY7C128-025C, CY7C128-050C, and CY7C128-100C devices.

In terms of its application field, CY7C1262XV18-450BZXC is mostly suitable for high performance, demanding applications with memory requirements such as embedded systems, military and aerospace. With an operating temperature range of -40°C to +85°C, it is an excellent choice for use in applications that require robustness and reliability in extreme conditions. This device is also capable of withstanding a wide range of environmental conditions and EMI/RFI interference.

CY7C1262XV18-450BZXC is a synchronous SRAM memory device which is based on a unique architecture that facilitates readable/writable operations with very low power consumption. It features an internal address counter and multiplexer that can be used to access and read/write data from different addresses simultaneously. The device also offers On-chip Error Checking and Correction (ECC) to detect and correct 1-bit errors in data.

The device also has several advanced features like Random Read and Random Write. Random Read is an operation that reads data from a given address instants after an address is accessed. Random Write is an operation that allows data to be written to a given address immediately after an address is accessed. This feature makes it suitable for high-speed applications that need quick access to data.

CY7C1262XV18-450BZXC comes with several power backup features. The device supports both power backup and shutdown modes. When the main power supply is lost, the device shuts down and holds the data on the memory cells without the need for additional power circuitry. The device also supports programmable refresh cycles that are needed to refresh the data stored on each memory cell.

In conclusion, CY7C1262XV18-450BZXC is an excellent memory device for high-performance military, aerospace and embedded system applications. This device features low power consumption, high reliability, robustness and a wide variety of advanced features that make it a great choice for these types of systems. It can be easily integrated into existing designs and is capable of providing fast and reliable performance.

The specific data is subject to PDF, and the above content is for reference