Allicdata Part #: | CY7C11501KV18-400BZXI-ND |
Manufacturer Part#: |
CY7C11501KV18-400BZXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, DDR II+ Memory IC 18Mb (512K x... |
DataSheet: | CY7C11501KV18-400BZXI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II+ |
Memory Size: | 18Mb (512K x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C11501 |
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CY7C11501KV18-400BZXI is a memory device of dynamic random access memory (DRAM). It is a high-bandwidth and reliable main-memory with an embedded SRAM that provides 8K bit access registers. This chip is often used in systems that require high frequency and low power consumption. It is suitable for systems that require a high-performance, high data rate and low leakage. It is also used for embedded applications such as 3D graphics.
The DRAM embedded in CY7C11501KV18-400BZXI adopts a unique architecture that can provide higher speed performance than traditional DRAM. It features 1,000MHz clock speed, and supports high-speed burst transfer rates. It also supports 1Mb to 8Mb memory density, and provides up to 16Mb access space. This chip also integrates an SRAM with a capacity of 8K bit, which is used to store high access registers.
CY7C11501KV18-400BZXI has various applications in the computer industry, such as video applications, memory intensive operations, and processor intensive applications. It is widely used in mobile phones, PDAs, embedded systems, PCs, laptops, and set-top boxes. It is suitable for applications that require a high degree of speed, such as entertainment systems, graphics accelerators, video players, and so on.
The working principle of CY7C11501KV18-400BZXI is based on the concept of data transfer between the DRAM and the SRAM. This process is performed in a time-sharing manner. When data is transferred from the SRAM to the DRAM, a burst addressed from the SRAM is read by the DRAM. The read data is then written back to the SRAM. This is known as burst transfer. When data from the DRAM to the SRAM is required, the data transfer is mediated by the SRAM’s address register. The SRAM requests the data from the DRAM and the data is read and stored in the SRAM. This is known as burst read.
CY7C11501KV18-400BZXI is a high-speed, low-power, reliable DRAM device that is suitable for embedded applications. It is designed to support two-way burst transfer that can improve system performance. It is an ideal choice for systems that require high data rates, low power consumption and high reliability.
The specific data is subject to PDF, and the above content is for reference
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