CY7C09579V-83BBC Allicdata Electronics
Allicdata Part #:

CY7C09579V-83BBC-ND

Manufacturer Part#:

CY7C09579V-83BBC

Price: $ 66.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1.152M PARALLEL 172FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.152Mb (3...
DataSheet: CY7C09579V-83BBC datasheetCY7C09579V-83BBC Datasheet/PDF
Quantity: 122
1 +: $ 60.08310
10 +: $ 54.08170
25 +: $ 52.90290
50 +: $ 51.79540
Stock 122Can Ship Immediately
$ 66.09
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C09579
Supplier Device Package: 172-FBGA (15x15)
Package / Case: 172-LFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 6ns
Series: --
Clock Frequency: 83MHz
Memory Size: 1.152Mb (32K x 36)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory plays an important role in CPU, MCU, DSP, IC and embedded system. The CY7C09579V-83BBC is a high-speed, low-power static RAM (SRAM), which is used in a wide range of applications, such as embedded computer systems (application servers, server machines, network servers, routers and firewalls) and consumer electronics (MP3 players, digital cameras, cellular phones and flat panel displays). It has a 5V power operating voltage and a 3.3V I/O with 512K x 9. It also has a 64-bit bus width, which allows it to access large blocks of data very quickly.

The working principle of the CY7C09579V-83BBC is based on SRAM technology, which allows for fast and reliable data storage and retrieval. The basic structure of an SRAM consists of a number of memory cells. Each memory cell is composed of four transistors and an inverter. The four transistors form a pairwise linked pass transistor logic circuit. The logic data are stored in the SRAM cells based on the logic values of the pairs of transistors. The data can be read and written to the SRAM cell through a series of logic signals. The CY7C09579V-83BBC has a 9-bit output, which enables it to access data quickly and efficiently.

The CY7C09579V-83BBC is capable of fast and reliable data transfers due to its ultra-high-speed access times and low power consumption. It has the capability to process large volumes of data due to its 64-bit bus width. This makes the device suitable for applications such as embedded computer systems and consumer electronics. In addition, the device is exceptionally robust due to its programmable ECC and CRC error detection and correction capability, providing a highly reliable data storage device.

The CY7C09579V-83BBC is versatile and is capable of being used in a variety of applications. Its low power consumption and high speed make it the ideal choice for embedded computer systems and consumer electronics. Its high reliability and robustness make it suitable for mission critical applications. In addition, the device has a small form factor, making it easy to integrate into existing systems and applications.

In summary, the CY7C09579V-83BBC is a reliable, low-power and high-speed static RAM device. It is suitable for a wide range of applications, including embedded computer systems, consumer electronics and mission critical applications. Its versatile design makes it easy to integrate into existing systems and applications. It is the ideal choice for those seeking a fast, reliable and low-power memory device.

The specific data is subject to PDF, and the above content is for reference

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