CY7C1041GE-10VXI Allicdata Electronics
Allicdata Part #:

CY7C1041GE-10VXI-ND

Manufacturer Part#:

CY7C1041GE-10VXI

Price: $ 4.84
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY7C1041GE-10VXI datasheetCY7C1041GE-10VXI Datasheet/PDF
Quantity: 73
1 +: $ 4.39740
10 +: $ 4.01436
25 +: $ 3.93826
50 +: $ 3.91117
170 +: $ 3.50858
340 +: $ 3.49511
510 +: $ 3.27694
1020 +: $ 3.13750
Stock 73Can Ship Immediately
$ 4.84
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Description

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CY7C1041GE-10VXI is a low-power, single-port and single-voltage F-RAM. As a nonvolatile memory, F-RAM and its derivatives have the characteristics of low power consumption, high cycle life, fast write speed, intelligent error detection and correction, code protection, and wide supply voltage range. It can be used in various electronic systems and applications.

Memory

CY7C1041GE-10VXI uses F-RAM in its operations. F-RAM, or ferroelectric random access memory, is a technology that overcomes the limitations of traditional dynamic random access memory (DRAM) technology. F-RAM emulates DRAM technologies but stores data using a different technology. It uses an extremely high-speed "write" process maintained by a ferroelectric capacitor. This capacitor allows data to be written very quickly and effectively, while maintaining a low power consumption.

Unlike DRAM, F-RAM requires no periodic refreshing, such as its write cycle; data written to F-RAM remains indefinitely. Also, F-RAM is not subject to the same data corruption issues that DRAM is prone to. The technology also uses error detection and correction (ED/C) algorithms to detect and correct any data write errors, adding additional reliability and accuracy.

The CY7C1041GE-10VXI F-RAM runs on a single voltage level and provides low power requirements. It also has an active time of 15ns that can operate up to 35MHz, making it a suitable choice for high-performance applications. Additionally, the single-port F-RAM can support up to 64Kb externally by using a 64K-bit F-RAM connected to port 0 of the F-RAM.

In terms of applications, the CY7C1041GE-10VXI can be used as a storage medium in industrial control systems, energy management systems, consumer electronics, automotive or telecom applications. It can also be used in applications like sensor data storage, code storage, and audit trails. Furthermore, it can be used in medical devices and instrumentation.

Moreover, it is used in the field of radio frequency identification (RFID). It is used to store vital information related to an RFID tag, such as the serial number, the operating parameters of the RFID tag, and the identity history of the RFID tag. This information can be used for tracking asset chains, managing inventory flow and providing security for identification.

To summarize, the CY7C1041GE-10VXI is a low-power, single-port, single-voltage F-RAM that can be used in various electronic systems and applications. Its applications include industrial control systems, energy management systems, consumer electronics, automotive or telecom applications, and medical devices and instrumentation. It is also used in the field of RFID, where it is used to store vital information related to an RFID tag.

The specific data is subject to PDF, and the above content is for reference

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