| Allicdata Part #: | CY7C1061GE18-15BVJXIT-ND |
| Manufacturer Part#: |
CY7C1061GE18-15BVJXIT |
| Price: | $ 17.47 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 16M PARALLEL 48VFBGA |
| More Detail: | SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral... |
| DataSheet: | CY7C1061GE18-15BVJXIT Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 15.87600 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 16Mb (1M x 16) |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 15ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.65 V ~ 2.2 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-VFBGA |
| Supplier Device Package: | 48-VFBGA (6x8) |
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CY7C1061GE18-15BVJXIT is a static random access memory (SRAM) device operating in synchronous mode. This type of memory is used as a buffer memory between the processor and other system peripheral devices. The memory is interfaceable with the processor through a synchronous serial interface, which is enabled by a dedicated set of function blocks that are unique to this memory type.
The memory is constructed with an SRAM array that is organized as 1024 words consisting of 8 bits each. The speed of operation of this device is dependent on the clock rate, which is specified as up to 15MHz. In addition, the memory supports a Random Address Width option, which allows for the width of the address signals to be programmed during each write and/or read cycle, allowing for greater flexibility in addressing. The operating voltage for this device is 5V.
The CY7C1061GE18-15BVJXIT device is used for many different applications, including use as a buffer memory for video and audio data. It can also be used in embedded systems such as in mobile phones, drones, and embedded medical devices. In addition, the memory can be used in automotive applications that require data storage and buffering. In industrial automation, the device can be used for remote data transmission, data logging and data buffering.
The working principle of the CY7C1061GE18-15BVJXIT memory is based on SRAM technology. SRAM technology uses a series of transistors and capacitors to store binary data, which can then be read and written to. The data is stored in a large number of memory cells, which are divided into four separate arrays. The memory cells are connected to a single read/write line via an address decoder, which allows for data to be accessed quickly. The selected cells can then be written to by providing an appropriate voltage level, or read from by providing an appropriate read enable signal.
The CY7C1061GE18-15BVJXIT device provides the user with a high access rate and low power consumption. In addition, it is compatible with many different types of processors and provides a simple, reliable and cost effective solution for memory applications.
The specific data is subject to PDF, and the above content is for reference
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CY7C1061GE18-15BVJXIT Datasheet/PDF