CY7C12501KV18-400BZXC Allicdata Electronics
Allicdata Part #:

CY7C12501KV18-400BZXC-ND

Manufacturer Part#:

CY7C12501KV18-400BZXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II+ Memory IC 36Mb (1M x 3...
DataSheet: CY7C12501KV18-400BZXC datasheetCY7C12501KV18-400BZXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 36Mb (1M x 36)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C12501
Description

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CY7C12501KV18-400BZXC is a type of memory device which can be used in various computer applications, cases, and products. It’s a specialized device created with the purpose of storing data and instructions in a non- volatile way, so that they won’t be lost even in the case of a complete power failure. This innovative memory device has the advantage of being able to quickly transmit data, allowing data-intensive applications, such as gaming and graphic intensive designs and software, to run smoother and faster.

The Cypress CY7C12501KV18-400BZXC has a maximum speed of 400-MHz and available in a variety of sizes. It offers a storage capacity ranging from 128 KB to 2GB. It supports the DDR2 and DDR3 DRAM memory interface standard. These specifications make it a great choice for those who are looking for a reliable, durable and high-performance memory device.

The CY7C12501KV18-400BZXC was designed for consumer and commercial markets, making it ideal for both engineers and consumers. It has a wide range of application fields such as data centers, gaming and graphics, consumer electronics, industrial control, consumer products and more.

When it comes to the working principle of the CY7C12501KV18-400BZXC, the device stores data and instructions in a high-speed storage medium. The data and instructions can then be retrieved and used by the device’s processor. This processor reads and writes, in order to perform operations such as data processing and analysis, calculation, comparison and other related tasks.

The use of DRAM (dynamic random access memory) allows the memory device to store data with a high speed while consuming less power when compared to other types of memory technology. This makes it an ideal choice for high-performance applications that require a high speed of operations.

The CY7C12501KV18-400BZXC is a powerful memory device that can be used in various computer applications. It has the advantage of being able to quickly transmit data and can be used for data-intensive applications. In addition, it has a variety of capabilities and features, making it suitable for various application fields.

The specific data is subject to PDF, and the above content is for reference

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