CY7C1263V18-400BZC Allicdata Electronics
Allicdata Part #:

CY7C1263V18-400BZC-ND

Manufacturer Part#:

CY7C1263V18-400BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 36Mb (4M x 8)...
DataSheet: CY7C1263V18-400BZC datasheetCY7C1263V18-400BZC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
Base Part Number: CY7C1263
Description

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As an important memory device, CY7C1263V18-400BZC has wide application fields and working principles. It is mainly used in consumer and industrial markets, including consumer electronics, medical equipment, automotive systems, industrial control and security applications, aerospace guidance and control systems and so on.

CY7C1263V18-400BZC is a 4K x 18 asynchronous static RAM with a non-volatile configuration. It offers two types of configuration memories: write once/read many and read-writable. The device also provides an additional 5-bit customer user code which allows each device to be uniquely identified and secured during first power-on, factory programming or customer application.

In terms of its working principle, CY7C1263V18-400BZC is configured using the standard output stands in the three-state mode. The configuration signals CS and OE control the configuration. When CS is high, the output pins of the device are placed in the high-impedance state, allowing other configured pins on the same bus to be enabled. When both CS and OE are low, the device outputs its contents onto the data bus. The configuration is automatically written into the RAM without external control. Data can be read directly from or written to this RAM, providing high-density and extreme flexibility in system design.

CY7C1263V18-400BZC also integrates advanced features such as patented write-protection circuitry, Full Array Data Retention, Battery Backup and ultra low standby current. Asynchronous design permits full-cycling operations, thereby saving power. In addition, it has an extended temperature range of -40 to +125C.These advances enable CY7C1263V18-400BZC to be used in multiple application fields, such as industrial control, automotive systems, aerospace systems, consumer electronics, etc.

In conclusion, CY7C1263V18-400BZC is a high performance asynchronous static RAM that is widely used for various applications in different fields. It has an integrated non-volatile configuration memory, Full Array Data Retention, Battery Backup and ultra low standby current. In addition, it is able to operate in a wide temperature range of -40 to +125C and has a write-protection circuit to prevent accidental data overwrites. All these features make CY7C1263V18-400BZC an ideal choice for reliable, high performance applications.

The specific data is subject to PDF, and the above content is for reference

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