CY7C1313CV18-200BZC Allicdata Electronics
Allicdata Part #:

CY7C1313CV18-200BZC-ND

Manufacturer Part#:

CY7C1313CV18-200BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18...
DataSheet: CY7C1313CV18-200BZC datasheetCY7C1313CV18-200BZC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1313
Description

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The CY7C1313CV18-200BZC is an 8K x 16 static RAM (SRAM). It is a reliable and high cycle endurance static random access memory that is ideal for many applications. This memory is used in a variety of applications such as embedded systems, consumer electronics, general purpose data buffering and memory upgrades.

The 8K x 16 SRAM consists of a combination of CMOS SRAMs, which are fabricated with high performance semiconductor materials. It provides a wide range of memory densities, which makes it suitable for various applications. The CY7C1313CV18-200BZC consists of two banks of 4K words each. Each word consists of 16 cells connected in an 8-bit configuration. This enables the chip to provide high performance data storage and retrieval with a minimum of power consumption.

The CY7C1313CV18-200BZC Memory is designed to offer several advantages over other types of memory. First, it provides an extremely fast storage and retrieval rate due to its high-speed pipeline architecture. Additionally, its data retention capabilities are guaranteed for up to ten years. This makes the chip ideal for a wide range of data storage and retrieval applications.

Aside from its memory capabilities, the CY7C1313CV18-200BZC Memory also includes many other features that make it ideal for various applications. It supports true asynchronous operations, allowing microprocessors to operate at the fastest speeds while storing and retrieving data. Additionally, it provides an array of options for error detection and correction, which helps to ensure data integrity in a variety of systems. The chip also features a Power-Save mode, enabling it to conserve power when not in use.

The working principle of the CY7C1313CV18-200BZC Memory is that data is written and stored in its cells through a set of logic circuitry. This circuitry acts as a data bus between the microprocessor and the memory. When a write is requested, the microprocessor communicates with the data bus and transmits the data to the selected cell within the memory. When a read is requested, the data from the selected cell is sent back to the microprocessor. This process continues until all the required data is stored or retrieved.

The CY7C1313CV18-200BZC Memory is used in a wide range of applications, including embedded systems, consumer electronics, general purpose data buffering, and memory upgrades. It is an ideal choice for these types of applications due to its reliable, high cycle endurance, and power saving features. As such, it is a great choice for those looking to upgrade their memory capabilities.

The specific data is subject to PDF, and the above content is for reference

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