CY7C1318CV18-167BZC

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CY7C1318CV18-167BZC Memory Application Field and Working Principle

The CY7C1318CV18-167BZC is a high performance memory device from Cypress Semiconductor offering high speed NOR flash memory, serial SRAM and Pseudo SRAM. It is part of their Cypress Serial NOR Flash family, providing high performance, low power and small package options for asynchronous single-transaction and serial accesses.

Application Field

The CY7C1318CV18-167BZC is ideally suited for portable consumer and industrial applications that need both higher performance NOR Flash and Serial SRAM. Markets including consumer electronics, medical, telecom, automotive, industrial control and networking are expected to benefit from increased performance and smaller size.

Besides its stability, performance, low power and small package options, its flexible CLK-SD feature prevents a serial transaction from timing out during a read or write request; it reduces the serial data contention, which reduces support for power-saving sleep modes for devices and eliminates process variations.

The CY7C1318CV18-167BZC is available in TSOP and WFBGA packages, operating across a wide range of temperature and voltage extremes. As a part of the Cypress Serial NOR Flash family, the CY7C1318CV18-167BZC can also be used with other Cypress memory devices like AEON SPI Flash, CELLRAM NOR Flash and Pseudo SRAM.

Working Principle

CY7C1318CV18-167BZC is organized as 4 banks of 4 Megabit or 8 Megabit or 16 Megabit or 32 Megabit and is accessed via an industry-standard 8-bit, 16-bit, or 32-bit data bus. Data is written and read using a non-volatile dual-transaction (RD/WR) protocol which supports a combination of Serial Access Cycles (SAC) and Single Access Cycles (SAC).

The CY7C1318CV18-167BZC operates from either a single 2.7 V to 3.6 V power supply, or from dual supplies of 1.7 V to 3.6 V and 1.2 V to 3.6 V. The device can run on the same power supply voltage for read and write operations, or a separate supply for write and read operations.

The CY7C1318CV18-167BZC is fast, and it can be read (in 1.5-2.5ns) and written (in 6-10ns) at a sustained rate of 10MHz. It has extremely low power consumption, with less than 50mATypical Read standby current, 12mA Typical Read Current, 28mA Typical Program Current, and 5mA Writeback / Backup Current.

The device also offers Enhanced Data Protection (EDP), which prevents unintentional modification or erasure of program data. EDP also preserves data integrity even in the presence of power transients. The CY7C1318CV18-167BZC also offers other protection features such as Block Locking/Unlocking, Data/Address/Code Bus Protect, Hardware Lock/Unlock, and Program Suspend/Abort/Status features.

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