CY7C1320BV18-167BZC

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Memory

The CY7C1320BV18-167BZC device is a single clock, 16K x 18 high-speed static random access memory (SRAM) device. It is organized as 16K words by 18 bits, and the CY7C1320BV18-167BZC device is fabricated with advanced CMOS process technology. Operating from a single +3.3V (nominal) power supply, CY7C1320BV18-167BZC device provides high speed access to stored data. The CY7C1320BV18-167BZC device features a CMOS synchronous aspect, which is advantageous in system power dissipation and cycle time. Additionally, the synchronous aspect of the device provides simplified interface control with minimal wait-state insertion.

The CY7C1320BV18-167BZC device is available in a 44-pin (800mil) PBGA package with a 45° lead configuration. The device also utilizes a 2’F2 packaging technology with cavities on the top of the device package that promote thermal dissipation. The CY7C1320BV18-167BZC device is offered in standard density, with an access time of 15ns.

Application Field

The CY7C1320BV18-167BZC device has wide variety of applications, such as networking, telecommunications, storage systems, industrial controls and consumer electronics. The device is able to operate in multiple clock environments due to its advanced design. The CY7C1320BV18-167BZC device simplifies read and write operations in applications with static data, due to its low power dissipation and high speed access. The device is able to run at high speeds with minimal wait states, making it suitable for embedded memory applications.

Working Principles

The CY7C1320BV18-167BZC device operates as an SRAM device. The device has 16K x 18 words, and can store up to 304-bit data within a single clock cycle. The CY7C1320BV18-167BZC device can be accessed using only a single clock signal for read and write operations. The device operates with a rising edge of the Clock signal at the start of each transaction and can initiate a write or read operation with minimal wait states. The data is written or read from the device in a time sequencing fashion by using the address bits that are available on the device. The device has an address range of 16K x 18 words, providing storage for up to 304-bit data within a single clock cycle.

The CY7C1320BV18-167BZC device is designed with a single +3.3V (nominal) power supply. Operating from a single power supply, the device provides high speed access to stored data. The device can operate in multiple clock environments due to its advanced design, allowing data to be read or written within a single clock signal and reliefing the user from the complexity of managing multiple clocks. The device includes output enable and write enable inputs, allowing the user to control the timing of the data being written or read.

The CY7C1320BV18-167BZC device is fast and reliable due to its advanced design and low power dissipation. The device features an operating temperature range of -40°C to +85°C, allowing it to operate in most temperature ranges encountered in embedded applications. Additionally, the device utilizes a 2F2 packaging technology with cavities on the top of the device package that promote thermal dissipation.

In conclusion, the CY7C1320BV18-167BZC device is a high-speed static random access memory (SRAM) device, designed to provide asynchronous or synchronous single or dual port access. Operating from a single +3.3V (nominal) power supply, the device provides high speed access to stored data. The device has an operating temperature range of -40°C to +85°C and is suitable for embedded memory applications. With an access time of 15ns, the device is suitable for most embedded applications requiring fast and reliable data storage.

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