| Allicdata Part #: | CY7C1361KVE33-133AXM-ND |
| Manufacturer Part#: |
CY7C1361KVE33-133AXM |
| Price: | $ 15.47 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 9M PARALLEL 133MHZ |
| More Detail: | SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral... |
| DataSheet: | CY7C1361KVE33-133AXM Datasheet/PDF |
| Quantity: | 1000 |
| 72 +: | $ 14.06640 |
Specifications
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Synchronous |
| Memory Size: | 9Mb (256K x 36) |
| Clock Frequency: | 133MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 6.5ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3.135 V ~ 3.6 V |
| Operating Temperature: | -55°C ~ 125°C (TC) |
Description
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CY7C1361KVE33-133AXM application field and working principle
Introduction
CY7C1361KVE33-133AXM is a static Random Access Memory (SRAM) device from Cypress Semiconductor Corporation. It belongs to the CY7C136K family of devices that possess 1Mbits of memory density and are organized as 32K x 32 bits. It is specifically designed for applications that require low power consumption and requires high read/write access performance.Application Field
CY7C1361KVE33-133AXM SRAM can be used for various purposes and some of the typical applications include:- General purpose SRAMs that can be used in various types of embedded systems.
- Real-Time Embedded Memory Systems
- Error Checking & Correction (ECC) Memory applications
- Content Addressable Memory (CAM) Memory Applications
- Networking Applications, such as routers and switches.
- Disk Drive Controllers.
- Digital Telecom Systems
Working Principle
CY7C1361KVE33-133AXM works according to Static Random Access Memory (SRAM) architecture and operation. SRAM is a type of memory that stores digital data as electrical charge and does not require constant refresh to retain its information. It is characterized by much faster access time and much lesser latency. In SRAM, memory cells are created using 6 transistors (MOSFETs) that form latches.SRAM is much more reliable than its counterparts such as Dynamic RAM (DRAM) because it does not require refreshing of data. It does not require complex control logic, thus is easier and faster to operate with. CY7C1361KVE33-133AXM features configurable write protection and can be used as a Stand By Memory (SB RAM).Conclusion
CY7C1361KVE33-133AXM is an ideal device for applications that require robust performance and low power. Its wide range of use in various embedded memory systems and other applications has made it a popular choice of SRAM technology. Its faster access times and low latency makes it ideal for applications that require high speed performance.The specific data is subject to PDF, and the above content is for reference
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CY7C1361KVE33-133AXM Datasheet/PDF