CY7C136AE-55NXIT Allicdata Electronics
Allicdata Part #:

CY7C136AE-55NXIT-ND

Manufacturer Part#:

CY7C136AE-55NXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 16K PARALLEL 52PQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: CY7C136AE-55NXIT datasheetCY7C136AE-55NXIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-BQFP
Supplier Device Package: 52-PQFP (10x10)
Description

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The CY7C136AE-55NXIT is a member of Cypress’s ROM family of products. It is an Application Specific Integrated Circuit (ASIC) memory device which can be used in a variety of applications. The device is programmed in-system prior to installation, making it easy to switch configurations when a system needs to be changed. The CY7C136AE-55NXIT also has a low power consumption design and a small footprint which makes it ideal for use in a wide range of applications, including embedded systems, printers, medical and automotive technology.

The CY7C136AE-55NXIT is an asynchronous parallel EEPROM memory device which uses non-volatile Electrically Erasable Programmable Read-Only Memory (EEPROM). It consists of 8K bytes of programmable memory and a 16-bit write enable register which can be accessed through the 8-bit wide data bus. Each byte in the memory space can be programmed and the device supports byte and page operations. The memory can be written in-system without the need for external programming, allowing for fast and easy programming.

The CY7C136AE-55NXIT also contains embedded hardware protection which prevents inadvertent access to sensitive areas of the device. The hardware protection also facilitates external as well as in-system programming modes. It can be programmed using either the I2C or SPI bus.

The CY7C136AE-55NXIT is available in the 24-pin QFN package which makes it suitable for applications requiring small footprints and low power consumption. It features a wide operating voltage range and a data retention voltage of 2.5V. The high-speed access time is 6ns and the cycle time is 8ns. It also features high reliability and a long data retention period.

The working principle of the CY7C136AE-55NXIT is based on the non-volatile EEPROM technology. The memory device is programmed in-system prior to installation via the I2C or SPI buses and can be written to without the need for external programming. The device also supports hardware protection which prevents inadvertent access to sensitive areas of the device. Additionally, the CY7C136AE-55NXIT has a wide operating voltage range, a fast access time and a data retention voltage of 2.5V.

The CY7C136AE-55NXIT is a highly reliable memory device which is suitable for a wide range of applications including embedded systems, printers, medical and automotive technology. It also has a low power consumption design and a small footprint which makes it ideal for use in confined spaces. Additionally, the embedded hardware protection prevents inadvertent access to sensitive areas of the device which allows for secure programming and data storage.

The specific data is subject to PDF, and the above content is for reference

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