Allicdata Part #: | CY7C1381KV33-100BZXI-ND |
Manufacturer Part#: |
CY7C1381KV33-100BZXI |
Price: | $ 20.87 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous Memory IC 18Mb (512K x 36) Para... |
DataSheet: | CY7C1381KV33-100BZXI Datasheet/PDF |
Quantity: | 247 |
1 +: | $ 18.96930 |
10 +: | $ 17.83400 |
25 +: | $ 17.22140 |
50 +: | $ 16.67450 |
136 +: | $ 14.67210 |
272 +: | $ 14.27820 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous |
Memory Size: | 18Mb (512K x 36) |
Clock Frequency: | 100MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 8.5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3.135 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C1381KV33-100BZXI is a type of memory which is broadly used in a variety of applications. It is a non-volatile, asynchronous SRAM (static random access memory) which is used in industrial applications, medical devices, automotive applications, embedded systems, and other applications. The memory is suitable for a wide range of operating temperatures and voltage requirements, making it a reliable, high-performance solution for these kinds of applications.
The CY7C1381KV33-100BZXI memory is based on the latest in six-transistor (6T) and eight-transistor (8T) cell technologies. The 6T cell technology is a low-power, low-voltage technology which stores and retrieves data quickly, delivering high-priority tasks to the processor. The 8T cell technology is a high-performance, high-power technology which delivers more reliable and longer-lasting results. Combining these two technologies gives the CY7C1381KV33-100BZXI a good balance of power and performance.
The CY7C1381KV33-100BZXI memory is composed of four integrated chips. The first chip is responsible for data storage, while the remaining three are responsible for managing the processor via an integrated memory controller. The memory controller is capable of supporting a number of features and functions, including multiple chip selects, burst mode operation, and refresh control, as well as error correction and data protection.
When powering the CY7C1381KV33-100BZXI memory, the memory controller initiates the memory access by sending a read or write command. The command is received by the first chip, which then passes it to the other three chips. The second chip receives the command and determines what type of access (read or write) is being requested. It then executes the command, performing the necessary operations to read or write the data. The third and fourth chips are responsible for error correction, data refreshing, and refresh control.
The CY7C1381KV33-100BZXI memory is designed to deliver high performance, low-power consumption, and reliability. It is capable of handling a wide range of operating temperatures and voltage levels, making it suitable for a variety of applications. The memory is well suited for industrial, automotive, and medical applications, as well as embedded systems and other applications.
The CY7C1381KV33-100BZXI memory is an excellent choice for applications which require fast access times and reliable data storage. It is a reliable, high performance memory which provides the flexibility needed to meet the demands of a wide range of applications. With its low power consumption and high performance, the CY7C1381KV33-100BZXI is a great choice for any application which needs a dependable memory solution.
The specific data is subject to PDF, and the above content is for reference
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