CY7C1425JV18-267BZIT Allicdata Electronics
Allicdata Part #:

CY7C1425JV18-267BZIT-ND

Manufacturer Part#:

CY7C1425JV18-267BZIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 36Mb (4M x 9)...
DataSheet: CY7C1425JV18-267BZIT datasheetCY7C1425JV18-267BZIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
Base Part Number: CY7C1425
Description

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CY7C1425JV18-267BZIT is a high-performance dynamic random access memory (DRAM) device, primarily used as a dynamic RAM component in a range of situations. The CY7C1425JV18-267BZIT is based on a novel architecture design which offers lower power consumption, improved write/read speeds, and improved performance on some memory-intensive tasks.

The CY7C1425JV18-267BZIT is well-suited for a variety of applications including server farms, research centers, and data centers. Its primary strength lies in its ability to provide high-bandwidth, low-latency access to large amounts of data. The device can be used to create a shared memory architecture which allows for the sharing of data between multiple nodes on a network. It can also be used to create a distributed memory architecture which allows for the sharing of data between multiple nodes located on different networks.

The CY7C1425JV18-267BZIT also offers improved performance in comparison to traditional DRAM devices. It has an improved write/read speed and improved performance on large memory-intensive tasks. The CY7C1425JV18-267BZIT features an on-chip voltage regulator which helps to reduce power consumption. The CY7C1425JV18-267BZIT comes in the form of DRAM modules, and is available in various sizes, such as 4GB, 8GB, and 16GB.

The working principle of the CY7C1425JV18-267BZIT works as follows. The device consists of a number of individual DRAM cells organized in a matrix pattern which are visually represented as a grid. Each DRAM cell is composed of a capacitor and a transistor. When data is written to the DRAM cell, an electrical charge is stored on the capacitor and the transistor is closed, storing the charge. When data is read from the cell, the transistor is opened and the charge is released, allowing for data to be retrieved.

The CY7C1425JV18-267BZIT is a powerful memory device capable of providing improved performance in a range of situations. Its ability to provide high-bandwidth, low-latency access to large amounts of data makes it well suited to a variety of applications including server farms and data centers. Its novel architecture design also offers improved write/read speeds and improved performance on memory intensive tasks. The on-chip voltage regulator helps to reduce power consumption, making the CY7C1425JV18-267BZIT an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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