CY7C1442KV33-250AXC Allicdata Electronics
Allicdata Part #:

CY7C1442KV33-250AXC-ND

Manufacturer Part#:

CY7C1442KV33-250AXC

Price: $ 36.44
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 36Mb (2M x 18) Parall...
DataSheet: CY7C1442KV33-250AXC datasheetCY7C1442KV33-250AXC Datasheet/PDF
Quantity: 1000
72 +: $ 33.11740
Stock 1000Can Ship Immediately
$ 36.44
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 2.6ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Description

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Memory

CY7C1442KV33-250AXC is a non-volatile memory with a controller, which is widely used in consumer, drop-in replacements and higher performance applications due to its superior features. It provides faster read and write speeds compared to traditional memory devices and also offers large storage capacities.

The CY7C1442KV33-250AXC features a static RAM (SRAM) storage device whose content may still remain in the chip when the power is off or interrupted. The content in the device can be read or written at faster rates than the traditional memory devices. It is mainly used in consumer device applications such as mobile phones, digital cameras, gaming consoles and others. The chip also has a data retention feature which enables it to store data for a long period of time even when the power is off.

CY7C1442KV33-250AXC also features power-off protection, self-refresh mode and sleep mode to conserve energy. These features ensure that the memory content is preserved even when the device is not powered. In addition, the memory device has the capability to detect errors and take corrective action to ensure data integrity and reliability.

The working principle of CY7C1442KV33-250AXC is based on the Nitride Oxidation Isolation (NOI) technology. This technology is based on the principle of charge trapping in the nitride layer which forms an isolation barrier between the silicon and metal layers. This process forms a very stable non-volatile memory cell which can be accessed at high speeds compared to traditional memory devices.

The CY7C1442KV33-250AXC is a completely integrated solution for non-volatile memory application. It offers a flexible solution for any consumer device or embedded applications which require high speed, low power consumption, high reliability and a long life cycle. This memory device is a suitable solution for consumer applications such as telecommunications, consumer electronics, automotive applications, and industrial applications.

In conclusion, the CY7C1442KV33-250AXC is a widely used non-volatile memory device for consumer, drop-in replacements and higher performance applications due to its superior features. It provides fast read and write speeds, large storage capacity, power-off protection, self-refresh and sleep mode, noise immunity and data retention features. The working principle of the device is based on the NOI technology which makes it a suitable solution for consumer applications.

The specific data is subject to PDF, and the above content is for reference

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