| Allicdata Part #: | CY7C1474BV33-200BGIT-ND |
| Manufacturer Part#: |
CY7C1474BV33-200BGIT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 72M PARALLEL 209FBGA |
| More Detail: | SRAM - Synchronous Memory IC 72Mb (1M x 72) Parall... |
| DataSheet: | CY7C1474BV33-200BGIT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | -- |
| Base Part Number: | CY7C1474 |
| Supplier Device Package: | 209-FBGA (14x22) |
| Package / Case: | 209-BGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Voltage - Supply: | 3.135 V ~ 3.6 V |
| Memory Interface: | Parallel |
| Access Time: | 3ns |
| Series: | NoBL™ |
| Clock Frequency: | 200MHz |
| Memory Size: | 72Mb (1M x 72) |
| Technology: | SRAM - Synchronous |
| Memory Format: | SRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The CY7C1474BV33-200BGIT is a type of memory that can be used in a wide range of applications. This type of memory is a CMOS SRAM that is distributed by Cypress Semiconductor Corporation. The chip has been designed to be extremely low power, and can run at 3.3V, making it suitable for a variety of applications. It has an access speed of 20 MHz and a maximum operating temperature of 105°C.
The memory has a total of 256Kbits of memory capacity and is partitioned into two banks that can be used to store information or as permanent storage. The memory also features a number of error-correction and protection features, such as parity and ECC. This allows the memory to reliably store data even in the presence of errors.
The CY7C1474BV33-200BGIT is a well-suited choice for applications that require low power consumption, such as those used in portable devices or devices with low standby power requirements. It is also suitable for high-reliability applications, due to its error-correction and protection features. In addition, its 20MHz access time makes it suitable for fast operations.
The working principle of the CY7C1474BV33-200BGIT memory is based on the concept of digital logic. The memory stores information as a series of 1s and 0s, which is represented by electrical signals. When data is written to the memory, it is stored as electrical signals at specific memory locations. When the memory is read, the electrical signals are retrieved and processed into readable information.
The chip features an address pin, data pins, and control inputs. The address pin is used to specify the location in the memory where the data is stored. The data pins are used to receive and transmit data from the chip. The control inputs are used to control the memory’s operation. For example, the chip can be instructed to read or write data to a specified location in the memory.
The CY7C1474BV33-200BGIT memory offers a reliable and robust solution for applications that require a low power and high-reliability memory. The chip features features such as parity and error-correction capabilities, making it suitable for a wide range of applications. In addition, its 20MHz access time makes it suitable for fast operations. This makes it an ideal choice for applications where performance and low power consumption are required.
The specific data is subject to PDF, and the above content is for reference
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CY7C1474BV33-200BGIT Datasheet/PDF