CY7C2165KV18-550BZXC

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II+
Memory Size:	18Mb (512K x 36)
Clock Frequency:	550MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)

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Introduction To CY7C2165KV18-550BZXC

CY7C2165KV18-550BZXC is one of the of the most widely used, high performing and cost effective memory devices from Cypress. It is built using transistor-transistor logic (TTL) process, and is available as SOIC and VFBGA packaging formats. This memory which is offered in a 28 pin package is primarily used for volatile memory applications such as data storage, process control and system configuration.

Applications of CY7C2165KV18-550BZXC

This memory device is designed for use in a wide range of applications and industries, including:

• Medical equipments
• Factory automation equipments
• Business equipments
• Package delivery systems
• Security and surveillance systems
• Consumer electronics
• Communication systems
• Industrial robotics
• Medical equipments

This device is capable of providing fast read and write access times to enable the rapid execution of system configuration data. It has a low power consumption, which helps reduce system costs. Additionally, it is designed for data storage, process control and system configuration in automotive, industrial, medical, consumer and communication applications.

Features of CY7C2165KV18-550BZXC

This device offers several features that enhance its functionality and make it ideal for a wide range of applications. Some of the features include:

• High speed of 70MHz with a range of 8 to 16MHz.
• Low power consumption of 1.8V-3.3V.
• Automatic standby feature which reduces power consumption.
• 150mW power consumption.
• Optional CRAM or SRAM option with additional 256K or 512K memory.
• Support up to 64 bits internal data bus.
• Optional ECC or self-test option.
• Incredibly fast access time of 55ns with selectable burst mode.
• Serial ATA compliant.

Moreover, it has an operating temperature range of 0°C to 70°C, and a storage temperature range of -40°C to 85°C. This device is also designed for high speed access and features a selectable burst mode.

Working Principle of CY7C2165KV18-550BZXC

The device works on the principle of dynamic random access memory (DRAM). The memory is organized in rows and columns and each row consists of eight 32 Bit words (4 by 4 bits). When the memory is accessed, the correct address is sent and a row is selected. This selection loads the data into an internal shift register which is used to retrieve the data. The data can then be shifted out of the memory to an internal data bus that is available to access the data. The DRAM is highly capable of providing fast read and write access in order to enable seamless execution of system configuration data. It consumes low power, which helps in cutting down system costs.

Conclusion

The CY7C2165KV18-550BZXC is a highly efficient memory device from Cypress,designed for crucial process control, datas storage, and system configuration. It has a low power consumption and is compatible with multiple applications in various industries. Furthermore, its dynamic random access memory (DRAM) feature enables quick access times, making it an ideal choice for fast paced applications.

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