CY7C4122KV13-106FCXC Allicdata Electronics
Allicdata Part #:

CY7C4122KV13-106FCXC-ND

Manufacturer Part#:

CY7C4122KV13-106FCXC

Price: $ 201.06
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 144M PARALLEL 361FCBGA
More Detail: SRAM - Synchronous, QDR IV Memory IC 144Mb (8M x 1...
DataSheet: CY7C4122KV13-106FCXC datasheetCY7C4122KV13-106FCXC Datasheet/PDF
Quantity: 92
1 +: $ 182.78200
10 +: $ 180.07600
25 +: $ 176.01400
Stock 92Can Ship Immediately
$ 201.06
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR IV
Memory Size: 144Mb (8M x 18)
Clock Frequency: 1066MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.26 V ~ 1.34 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 361-BBGA, FCBGA
Supplier Device Package: 361-FCBGA (21x21)
Description

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The CY7C4122KV13-106FCXC is a device best classified as a type of memory. Memory, also referred to as storage or main memory, is the portion of a computer that stores data, instructions, and data preferences. It is responsible for keeping track of the processing and loading of all the information needed for the operation of the programs and apps on a computer.

The CY7C4122KV13-106FCXC is a two-bank asynchronous static random-access memory (SRAM) that can be used to store information and control data signals. This type of memory is ideal for applications that require fast write-to read access time, including computers, network routers, desktop computers, and many other embedded systems. It can also be used in field-programmable gate arrays (FPGAs) and automotive control systems.

The operation of the CY7C4122KV13-106FCXC is based on the classic SRAM cell, which consists of two access transistors, a memory transistor, and two cross-coupled inverters. These components are connected together in order to create an SRAM cell that stores a single bit. To read or write data to the cell, the read and write signals are used to change the state of the memory transistor, thereby changing the value stored by the cell.

The CY7C4122KV13-106FCXC has an 8-bit write/read port, making it suitable for a wide range of applications. It has a data access time of 6.3ns and can be used with a single +3.3V supply voltage. Its low power consumption and high speed make it an ideal choice for low power, high throughput applications. It also utilizes high-performance on-chip buffering to improve system reliability.

The CY7C4122KV13-106FCXC is a device that offers optimal performance in various applications. Its low power consumption and fast operation make it an ideal choice for a wide range of applications. It is suitable for use in computers, routers, embedded systems, and automotive control systems. Its reliable performance and easy-to-use design make it a great choice for those looking for a high-performance memory at an affordable price.

The specific data is subject to PDF, and the above content is for reference

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