Allicdata Part #: | DGD2101MS8-13-ND |
Manufacturer Part#: |
DGD2101MS8-13 |
Price: | $ 0.36 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | HV GATE DRIVER SO-8 T&R 2.5K |
More Detail: | Gate Driver IC |
DataSheet: | DGD2101MS8-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.33516 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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Introduction
PMIC (Power Management ICs) are semiconductor chips, whose main function is to manage the delivery of power throughout various system loads. PMICs include various components such as voltage regulators and switches, which regulate, monitor and adapt the power in order to ensure efficient power management. Gate drivers are one of the essential components of PMICs and are responsible for isolating and driving high current to the gate of the power MOSFETs. The DGD2101MS8-13 is a single high-side driver, which is suitable for use in the automotive applications such as safety systems, and body control systems.
Application Field
The DGD2101MS8-13 is suitable for use with harsh and demanding automotive applications. The device is designed such to drive the load at an operating voltage of up to 40V and is capable of delivering a nominal output current up to 1.3A. Furthermore, the device operates at temperature range of -40°C to +125°C and offers inrush current limited overshoot protection and current fold-back. This makes the device suitable for use with applications that require wide range of operating temperature, such as engine and battery control systems, and systems that require a high resistance to shock and vibration such as safety systems.
Working Principle
The DGD2101MS8-13 gate driver consists of two-stage driver circuit and two N-MOSFET transistors. The two stage driver circuit includes an input buffer stage and an output stage, which are connected in series. The input buffer stage includes an open collector N-MOSFET transistor and is responsible for isolating the output from the input signal, providing noise protection, and increasing the input impedance. The output stage consists of two N-MOSFET transistors, which are connected in parallel and are responsible for controlling the current that flows into the gate of the power MOSFETs. When the output voltage is low, the gate driver switch turns on, applying a high voltage to the gate of the MOSFET, which causes it to turn on. When the output voltage is high, the gate driver switch turns off, disconnecting the gate of the power MOSFET from the supply and thus turning it off.
Features
- Operates up to 40V input voltage
- Nominal output current of 1.3A
- Operates at temperature range of -40°C to +125°C
- Inrush current limited overshoot protection
- Current fold-back
Conclusion
The DGD2101MS8-13 is a single high-side gate driver, which is suitable for use with harsh and demanding automotive applications. Due to its wide range of operating temperature, high output current and over-temperature protection, the device is suitable for use with safety systems, engine and battery control systems, and other systems that require a high resistance to shock and vibration. The gate driver consists of two-stage driver circuit and two N-MOSFET transistors, which are responsible for providing isolation, controlling current flow and protecting the MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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