Allicdata Part #: | DGD2101S8-13DITR-ND |
Manufacturer Part#: |
DGD2101S8-13 |
Price: | $ 0.43 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | IC GATE DRVR HALF-BRIDGE 8SO |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SO |
DataSheet: | DGD2101S8-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.39690 |
5000 +: | $ 0.37706 |
12500 +: | $ 0.36288 |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 70ns, 35ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Series: | -- |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers
The DGD2101S8-13 is a highly integrated member of the Analog Devices, Inc. family of ICs designed to drive MOSFETs and IGBTs in high power applications. It combines a powerful gate driver, protection circuitry and an intelligent selectable gate current pulse generator to create a versatile solution for switching power devices. The DGD2101S8-13 is a single chip solution to accommodate both high and low side N-channel MOSFETs or IGBTs and can drive up to 6.5A peak gate current for fast switching and holding. This IC also features fault protection, independent enable, under-voltage lockout and adjustable dead time.
Application field
The DGD2101S8-13 is ideal for applications where high power switching elements such as MOSFETs and IGBTs need to be driven. These applications include DC-DC converters, motor drives, HV DC supplies and AC-DC rectifiers. The internal protection features make this IC suitable for automotive and aerospace applications.
Working principle
The DGD2101S8-13 operates on the principles of gate drive combined with intelligent selectable gate current pulse generation. The gate drive section of the circuit is responsible for driving current into and out of the gate of a power MOSFET or IGBT. A selectable gate current pulse generator creates a selectable current pulse which acts upon the gate drive circuitry to create a timed gate current pulse. This timed pulse provides faster switching speeds of the MOSFET or IGBT while reducing the EMI. The adjustable dead time also helps in reducing EMI and ESD, as well as protecting the MOSFETs/IGBTs from unwanted frequency interference.
The DGD2101S8-13 also features various integrated protection features such as under-voltage lockout and independent enable. The under-voltage lockout prevents the gate drive from turning on the power elements at low voltage levels which can damage the device. The independent enable feature allows for separate control of the high- and low-side drivers. The protection circuitry will sense any fault on the high- or low-side drivers and automatically shut down the drivers.
The specific data is subject to PDF, and the above content is for reference
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