DGD2190MS8-13 Allicdata Electronics
Allicdata Part #:

DGD2190MS8-13-ND

Manufacturer Part#:

DGD2190MS8-13

Price: $ 0.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Diodes Incorporated
Short Description: HV GATE DRIVER SO-8 T&R 2.5K
More Detail: Gate Driver IC
DataSheet: DGD2190MS8-13 datasheetDGD2190MS8-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.48479
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

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Power management integrated circuits (PMICs) are important components used to manage the power flow of a system. They are used to control power delivery, monitor power consumption, protect power connections, and efficiently regulate energy consumption. Gate drivers are components of PMICs that provide a signal to control the switching of various power transistors such as field effect transistors (FETs) and insulated gate bipolar transistors (IGBTs). The DGD2190MS8-13 is a PMIC-gate driver designed to drive wide voltage range FETs, IGBTs, and MOSFETs which are used in switching power supplies, motor drives, and many other applications.

The DGD2190MS8-13 is an IC that is suitable for controlling the gate voltage of a high-side, half-bridge and full-bridge MOSFET configuration, making it one of the more versatile gate drivers. It has a wide input voltage range of 3.4 V to 40 V, a PWM control, a floating current sense resistor, an external voltage reference voltage and an integrated bootstrap diode, making it well suited for applications that require high-side and low-side power switches in a single package.

The device can be configured to operate in either a half-bridge or full-bridge power configuration. In a half-bridge configuration, a pair of MOSFET switches are controlled by the current flowing through them. When the supply voltage is applied, the lower MOSFET is turned on and off using the gate driver. The upper MOSFET is turned on and off by floating the current sense resistor. By using an external voltage reference voltage, the upper and lower MOSFETs can be used to switch power without risking damage to the low-side MOSFET.

In a full-bridge configuration, the DGD2190MS8-13 can be used to control two pairs of MOSFETs. The upper and lower pairs of MOSFETs are driven by the same gate voltage, with the gate voltage of the upper pair being higher than the lower pair. This allows the upper pair of MOSFETs to switch larger currents than the lower pair. The DGD2190MS8-13 is able to provide maximum efficiency by minimizing switching losses and reducing switching delays.

The DGD2190MS8-13 also features an integrated bootstrap diode for high efficiency and low on-resistance. The diode allows the device to generate a high voltage when the voltage supply is below the breakdown voltage. It also provides protection against current flow in the wrong direction. The bootstrap diode is able to deliver up to 4A at 20V, making it suitable for high voltage switching applications.

The DGD2190MS8-13 is suitable for applications such as motor drives, uninterruptible power supplies, UPSs, telecom equipment, motor controls, and dc-dc converters. It is also suitable for high voltage, high efficiency applications that require fast switching and high current capacity. The device can be used in a wide range of applications, including automotive, industrial, and medical devices. Additionally, it is an ideal choice for systems that require high power as it is able to deliver efficient power conversion, allowing the system to save energy and improve performance.

The specific data is subject to PDF, and the above content is for reference

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