Allicdata Part #: | DGD2117S8-13-ND |
Manufacturer Part#: |
DGD2117S8-13 |
Price: | $ 0.67 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | IC GATE DRVR HIGH SIDE 8SO |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-SO |
DataSheet: | DGD2117S8-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.61236 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | High-Side |
Channel Type: | Single |
Number of Drivers: | 1 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 10 V ~ 20 V |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 600V |
Rise / Fall Time (Typ): | 75ns, 35ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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PMIC - Gate Drivers are commonly used components in power management circuits. They are used to control the timing and power-sourcing of power transistors in order to efficiently control power flow in circuits. The DGD2117S8-13 Gate Driver is a typical member of such components.
The DGD2117S8-13 Gate Driver has wide applications in various types of power electronics, from automotive applications to general industrial applications. It can be used to control the power supplies in a range of applications, including motor drives, power sequencing, power factor correction and power management. Furthermore, it can be used in a range of systems, such as solar, UPS and battery management systems.
The DGD2117S8-13 Gate Driver is a high-side gate driver capable of driving a full bridge of N or P-channel power MOSFET’s or IGBT’s. It includes two separate drivers, working in parallel from a single supply, with a maximum output current of 5A. The device also provides over-current protection and over-voltage protection, as well as adjustable dead-time and adjustable fast & slow slope drivers. The full bridge version is designed to have fast turn-off and fast turn-on transistors, offering fast response and slew rate without the need for an external driver.
The working principle of the DGD2117S8-13 Gate Driver is based on the push-pull method of driving the power MOSFET. The driver is equipped with two independent amplifier stages, one controlling the high side and the other controlling the low side of the full bridge. The driver is also equipped with two independent outputs, one for each side of the bridge. Each output is capable of providing short-to-ground or open-drain control in order to protect the MOSFET from over-voltage or over-current conditions.
The driver also includes two independent error amplifiers, one for each side of the full bridge, in order to detect and compensate for power supply and load conditions. The error amplifier provides feedback signal to the two independent pulse-width-modulated (PWM) output stages for controlling the on/off timing of the transistors, allowing the circuit to switch faster even under high load conditions.
In summary, the DGD2117S8-13 Gate Driver is a highly reliable and efficient power management device with a wide range of applications in various types of power electronics. It is equipped with over-current and over-voltage protection and is capable of driving a full bridge of N or P-channel power MOSFET’s or IGBT’s. The working principle of the Gate Driver is based on the push-pull method of driving the power MOSFET, and it has two independent error amplifiers for feedback signal. With its fast turn-on and turn-off transistors, the DGD2117S8-13 Gate Driver offers fast response and slew rate, making it an ideal choice for a wide range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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