Allicdata Part #: | DGD2103AS8-13DITR-ND |
Manufacturer Part#: |
DGD2103AS8-13 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | IC GATE DRVR HALF-BRIDGE 8SO |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SO |
DataSheet: | DGD2103AS8-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 100ns, 50ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Series: | -- |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers are widely used in the integrated circuit industry and are often crucial components in automotive systems, as they provide the primary source of control between the power stages and the logic/signal stages. The DGD2103AS8-13 is an example of a PMIC device; this article will discuss the application field and working principle of this device.
The DGD2103AS8-13 is a high-speed, low-power gate driver. It is capable of driving both N- and P-channel MOSFETs and IGBTs, and can be applied to achieve the fast current limit of high-power applications. It is typically used in automotive voltage converter and buck/boost applications of varying output currents and frequencies, as well as in power supply applications such as DC-DC converters and POE controllers. Due to its combination of high speed, low power, and DC operation, it is also suitable for use in many other types of power electronics applications such as motor control and power factor correction.
The DGD2103AS8-13 features an adjustable overcurrent detection threshold and protection delay times. This control is essential in applications such as automotive voltage converters, which require fast and accurate current limit protection. The device also features an integrated start-up circuit that provides both high-level and low-level start-up functions to ensure reliable startup of the system. The built-in level-shifting circuit allows for easy interfacing between the high-side and low-side MOSFETs, while the built-in short-circuit protection circuitry minimizes the risk of damage or malfunction.
The working principle of the DGD2103AS8-13 is based on the use of a pair of complementary MOSFETs that form a switch. The two transistors are connected in a “push-pull” configuration, allowing for the use of a single control signal to drive the switch. The gate driver converts the control signal into an appropriate voltage swing at the transistor gates to switch the device on or off. It then applies current limiting, voltage limiting, and over-current protection circuitry to ensure safe and reliable operation of the device.
The DGD2103AS8-13 provides a number of features that make it an ideal solution for high-power, high-speed applications. Its low power consumption and wide range of protection features make it suitable for a variety of automotive and industrial applications. Its adjustable overcurrent detection threshold and protection time combined with the integrated start-up circuit and level-shifting circuitry allow for reliable and robust operation of the device. Finally, its high speed makes it ideal for a variety of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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