DGD2104S8-13 Allicdata Electronics
Allicdata Part #:

DGD2104S8-13DITR-ND

Manufacturer Part#:

DGD2104S8-13

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Diodes Incorporated
Short Description: IC GATE DRVR HALF-BRIDGE 8SO
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SO
DataSheet: DGD2104S8-13 datasheetDGD2104S8-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 70ns, 35ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 290mA, 600mA
Series: --
Voltage - Supply: 10 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Gate drivers are essential components in power management systems, and play a key role in the reliability and efficiency of the system. The DGD2104S8-13 is one such gate driver, which is designed to drive N-type MOSFETs and IGBTs and is the ideal power solution for high power applications.

This powerful gate driver is capable of delivering up to +-13V gate drive voltage and has a maximum output current of 4A. It has an operating temperature range of -40°C to 85°C and is protected from short circuit conditions. The application areas for the DGD2104S8-13 are diverse and it can be used in various applications such as:

  • Motion Control Systems
  • Power Supply Applications
  • Power Converters
  • Power Distribution Networks
  • High Power Lighting Systems
  • Industrial Automation

The DGD2104S8-13 is equipped with an integrated bootstrap diode, which ensures a controlled start of the gate driver in applications where reverse voltages are encountered. The unique dynamic bootstrap switching provides a fast dynamic response, low noise, and no reverse current flow. The device\'s over temperature protection feature ensures stability even in harsh operating conditions. The under voltage lockout feature ensures that the device is enabled only when the power supply is within its specified range. Further, integrated EMI shielding provides an effective countermeasure against ground loop interference.

In terms of its working principle, the DGD2104S8-13 gate driver has an input voltage of 8V to 13V, which is fed to the N-type MOSFETs or IGBTs. The gate driver then processes the signal and delivers it as an output gate drive voltage that can be anywhere within the +-13V range, depending on the application requirements. The integrated bootstrap diode in the DGD2104S8-13 helps in the power up stage and reverse voltage protection, ensuring the stability of the device.

Overall, the DGD2104S8-13 gate driver is a robust and reliable device that finds application in any place where switching performance and reliability is required. Its wide operating temperature range ensures its stability even under extreme operating conditions. The integrated bootstrap diode further ensures that the device is functional even in cases where reverse voltage is encountered, making the DGD2104S8-13 a reliable partner for any power management system.

The specific data is subject to PDF, and the above content is for reference

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