DGD21042S8-13 Allicdata Electronics
Allicdata Part #:

DGD21042S8-13-ND

Manufacturer Part#:

DGD21042S8-13

Price: $ 0.36
Product Category:

Integrated Circuits (ICs)

Manufacturer: Diodes Incorporated
Short Description: IC GATE DVR HV 8SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SO
DataSheet: DGD21042S8-13 datasheetDGD21042S8-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32563
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The DGD21042S8-13 is a high-performance full-bridge gate driver. It enables a simple and cost-effective implementation of high-power systems in industrial, automotive, and consumer applications. The gate driver is suitable for both top-side and bottom-side high-side and low-side MOSFET/IGBT gates, and also allows for full-bridge/half-bridge configurations. It has a wide range of operating temperatures, from -40C to +125C, making it well-suited for use in harsh environments. The driver is well suited for a variety of applications ranging from motor control, power supplies, and battery management to automotive engine and body electronics.

The DGD21042S8-13 combines high-current drive capability with flexible input logic for simple operation. It offers an optimal solution for controlling MOSFET/IGBTs in power-conversion and motor-drive applications, as well as other high-side and low-side switching applications. The device features two integrated full-bridge driver stages, with separate logic inputs for each bridge. The driver is capable of driving up to 2A current, with a peak current of 4A. It provides high efficiency due to low power consumption and low EMI emission. It has a built-in short-circuit protection to protect the device from the load.

The DGD21042S8-13 has a wide input voltage and can be configured to drive gates with supply voltages ranging from 18 V to 40 V. It has an integrated charge pump that provides the necessary gate drive voltage to drive the gates with a higher voltage, up to ±20 V. The pulser output allows precise gate drive control and safe turn-on and turn-off sequences. The integrated level-shifter ensures precise logic signal levels and allows for trouble-free operation over the entire temperature range.

The DGD21042S8-13 operates from a supply voltage of 1.8 V to 5.5 V and is designed for low-power operation. It features low-noise operation and minimized EMI emission through spread-spectrum clock modulation. The device is enabled via an ENABLE pin, ensuring low power consumption when not in use. It has an integrated Undervoltage Lockout (UVLO) feature that ensures safe operation by preventing the device from powering up unless the supply voltage is higher than a set threshold.

The DGD21042S8-13 offers fast switching times and a low output impedance for high-efficiency operation. The built-in driver features protect the device from over- and under-voltages, under-currents, and over-loads. The driver is designed to withstand harsh thermal conditions, with an IC temperature range from -40C to +125C. It also provides protection from electromagnetic interference (EMI).

The DGD21042S8-13 is an ideal solution for industrial, automotive, and consumer applications. It is suitable for driving high-power switching applications such as motor control, power supplies, and battery management. The driver has built-in protection features and is capable of operating over a wide temperature range. It offers high-efficiency operation, low-noise operation, and minimized EMI emission. It provides a simple, cost-effective implementation of high-power systems.

The specific data is subject to PDF, and the above content is for reference

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