Allicdata Part #: | DGD2106S8-13DITR-ND |
Manufacturer Part#: |
DGD2106S8-13 |
Price: | $ 0.70 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Diodes Incorporated |
Short Description: | IC GATE DRVR HALF-BRIDGE 8SO |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SO |
DataSheet: | DGD2106S8-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.63788 |
5000 +: | $ 0.61425 |
Logic Voltage - VIL, VIH: | 0.6V, 2.5V |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 100ns, 35ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Series: | -- |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers
DGD2106S8-13 is a high-performance gate driver with integrated protection features, specifically designed for high side and low side driving of Si, GaN or IGBT power switches in automotive, industrial, consumer and medical applications. This is the perfect product to use when needing a reliable, safe and easy to use high side driver.
The DGD2106S8-13 has two channels, with each channel rated for up to 500mA of load current, and with a rail-to-rail swing from 0V to 36V. It runs on a supply voltage of 5V - 21V to ensure those tight supply voltage margins are considered when working with high voltage automotive batteries.
The DGD2106S8-13 has a wide temperature range of -40°C to +125°C to ensure reliable operation in extreme temperatures. It also features internal voltage clamping which prevents back EMF and gate charge containment in case of an inductive load. This is important in quality gate driving and current control.
In addition to a short circuit protection, it also includes an overcurrent protection and a protection against ground shifts. It is capable of detecting a short circuit in less than 5µs, which prevents the destruction of the MOSFET or IGBT and eliminates potential fault conditions. In addition, the over-temperature protection prevents devices from heating up and keeps their operation safe.
This flexibility allows for easy and safe use in various environments and applications. Its use can be seen in power relays for automotive chargers, power relays for electric vehicle charging systems, air flow control systems, consumer and medical LED control systems, and more.
The working principle of the DGD2106S8-13 is based on the MOSFET-driven gate drive techniques. When the input voltage is applied to the gate, the internal gate drive current is boosted to the ideal gate voltage to vdrically turn on the MOSFET or IGBT gate. This ensures that it can easily switch between low side and high side operation over the entire allowed range of 0V to 36V.
In addition, the DGD2106S8-13 has an integrated driver IC and an output voltage threshold voltage detector that senses when the external MOSFET or IGBT has reached its full on-state resistance. The device turns off the gate voltage if the current demands exceed the safe threshold to prevent damage to the connected devices.
This makes the DGD2106S8-13 gate driver suitable for most different applications where gate driving needs to be exactly controlled and easy to use. Due to its overengineering and robustness, it is also ideally suitable for critical applications in the industrial, automotive and other high-reliability segments.
The specific data is subject to PDF, and the above content is for reference
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