Allicdata Part #: | DMG1016UDW-7DITR-ND |
Manufacturer Part#: |
DMG1016UDW-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 20V SOT363 |
More Detail: | Mosfet Array N and P-Channel 20V 1.07A, 845mA 330m... |
DataSheet: | DMG1016UDW-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | DMG1016UDW |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 330mW |
Input Capacitance (Ciss) (Max) @ Vds: | 60.67pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 0.74nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 600mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.07A, 845mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG1016UDW-7 Application Field and Working Principle
The DMG1016UDW-7 is a high voltage, power MOSFET array composed of four N-channel DMOS transistors. Manufactured by the Hitachi Semiconductor (now Renesas Electronics Corporation), it is designed using the latest TrenchDMOS process and advanced cell design techniques to provide enhanced levels of performance and improved power dissipation levels. This makes it ideal for use in high-performance switching applications.
The DMG1016UDW-7 can operate over a voltage range of -200 to -600 volts, with a maximum drain current rating of 200mA and a total gate-source voltage (Vgs) of -2.0V. It also has a low on-resistance rating of 30mΩ and a fast switching speed of 25ns. This allows for higher-performance switching applications, such as DC-DC and AC-DC power conversion.
Working Principle and Applications
The working principle of the DMG1016UDW-7 is based on a two-terminal, power MOSFET array. In this case, the DMOS transistors are arranged in series, with each one having its own gate-source voltage (Vgs). When a voltage is applied to the gate of the first transistor, it will turn on, allowing current to flow through the second transistor. This causes it to turn on as well, resulting in a voltage drop across the entire array and enabling current to flow.
The DMG1016UDW-7 can be used in a wide range of applications, from DC-DC and AC-DC power conversion, to the implementation of complex high-speed switching topologies. Its low on-resistance rating allows for improved efficiency in these applications, while its fast switching speed ensures that the device is able to operate at higher frequencies. Additionally, due to its high voltage and power handling capabilities, it is well-suited for use in DC motor drive, telecom line powered equipment, and other high-voltage applications.
Conclusion
The DMG1016UDW-7 is an ideal device for use in high-performance switching applications due its low on-resistance rating, high voltage and power handling capabilities, and fast switching speed. It is well-suited for DC-DC and AC-DC power conversion, as well as the implementation of complex high-speed switching topologies. Additionally, due to its high voltage and power handling capabilities, it is well-suited for use in DC motor drive, telecom line powered equipment, and other high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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