DMG10N60SCT

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	178W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1587pF @ 16V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	750 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Cut Tape (CT)

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DM G10N60SCT Application Field and Working Principle of FETs, MOSFETs - Single

Field-effect transistors (FETs) are solid-state electronic devices with three terminals and a special construction, consisting of a continuous channel between two source electrodes, across which a control voltage is applied. The current in the channel is controlled by the voltage V GS , which is applied between the gate and the source electrode, making FETs extremely useful for applications computing, signal processing, data communications and many other areas of electronics where signal control is needed.

The DMG10N60SCT is a type of Field-effect transistor (FET) that belongs to the family of FETs, MOSFETs - Single. It is a low voltage (usually less than 10V), high current (up to 600A) power switch. DMG10N60SCT are capable of switching large amounts of power with minimal losses, making them ideal for use in high power applications such as motor control, servers and data center cooling, automotive system control, and commodity control applications. The FET also displays good temperature stability, meaning that it can maintain its performance over a wide temperature range.

In general, the operating principle of single-gate FETs and MOSFETs is the same, meaning that their application fields are also probably the same. DMG10N60SCT MOSFETs are designed for high-performance, low-power switching applications where excellent reliability, long lifetime and high current density are critical. This type of power transistor also has an excellent source-drain breakdown voltage and fast switching speed, making it suitable for a variety of applications ranging from controlling motors to other industrial and automotive applications.

The DMG10N60SCT operates on the principle of majority carrier injection. This means that when a voltage is applied between the gate and the source, majority carriers such as electrons or holes are injected into the channel beneath the gate, which then modulate the current flow across the drain and source terminals. The voltage applied between the gate and the source is then used to modulate the current flow – is known as the gate-source voltage or VGS. When the VGS is increased, the conducting channel between the source and the drain increases, thus allowing a larger current flow.

Moreover, the main advantage of majority carrier injection is that the gate voltage acts like a variable resistor, allowing for adjustable current flow with minimal losses over a wide range of working voltages. This makes the switch suitable for applications that require precise and reliable control over current flows, like motor control or temperature control. The DMG10N60SCT is also capable of efficiently switching between off and on states, making it a reliable switch for applications involving communications and control circuits.

Another advantage of the DMG10N60SCT is its low Ron (drain-source resistance) and Rds(on) (drain-source on-state resistance). Low Ron and Rds(on) both mean that the transistor requires less power to operate and leads to a lower on-state power consumption, which is important for applications consuming a lot of electrical energy. Additionally, the high switching speed of DMG10N60SCT makes it well-suited for applications involving repetitive switching, such as high-frequency power conversion and motor control. Its low power dissipation is also important in motor control applications, as it ensures minimal heat buildup and allows the switch to be operated at higher frequencies without degrading its performance.

In conclusion, the DMG10N60SCT is a low voltage, high current power switch designed for high-performance, low-power switching applications. It has a small on-resistance, low power dissipation and fast switching speed, making it suitable for applications like motor control, temperature control, automotive systems and server systems. Its majority carrier injection operation also provides excellent reliability and adjustable current flow with minimal losses.

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