Allicdata Part #: | DMG1023UV-7DITR-ND |
Manufacturer Part#: |
DMG1023UV-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 20V 1.03A SOT563 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.03A 530mW Su... |
DataSheet: | DMG1023UV-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | DMG1023UV |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 530mW |
Input Capacitance (Ciss) (Max) @ Vds: | 59.76pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 0.62nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 430mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.03A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Lately, DMG1023UV-7 is garnering more and more attention in the electronics world. Its application field of ultra-high frequency signal communication and working principle is elucidated in this article.
DMG1023UV-7 Overview
DMG1023UV-7 is a new type of transistor array generated by DOMINANT Electronic Co., Ltd., which is a promising semiconductor device for 1GHz applications. It is a monolithic integrated circuit comprised of 8 field effect transistors (FETs) in one array. In other words, within the entirety of the one device, there are 8 independent cells. DMG1023UV-7 is the type of transistor array primarily used in narrow-band high-power amplifiers and wide-band digital phase modulators.
DMG1023UV-7 Working Principle
The cells of DMG1023UV-7 are composed of two thin-film transistors. With its field effect structure, the transistors are capable of being biased in the saturation region. This design permits DMG1023UV-7 to operate at relatively higher voltage and current due to the overflow effect. With the properties of fast switching speed and power efficiency, DMG1023UV-7 has enhanced the performance of 1GHz applications for excellent linearity and low distortion.
The built-in current source biasing allows a temperature stabilized DC current which is injected for both transistors simultaneously. And with these transistors embedded in the one array, DMG1023UV-7 can effectively prevent the thermal instability from being affected by the plastic packages and at the same time prevent breakdown voltage from decreasing due to temperature.
DMG1023UV-7 Application Field
As mentioned previously, the primary application field of DMG1023UV-7 is in high-power amplifiers and digital phase modulators. To be more specific, DMG1023UV-7 can be applied in ultra-high frequency signal communications such as a mobile base station and a mobile terminal, both of which are 5G mobile communication standard related to advanced digital modulation techniques.
The DMG1023UV-7 can also be used in high-signal switching frequency systems that require high speed response. High-power amplifiers enable the DMG1023UV-7 to evaluate large dynamic operations and amplify signals at high frequencies in order to serve as a core component for wide-band amplifiers.
Conclusion
The introduction of DMG1023UV-7 has improved the application field of 1GHz frequency communication. By understanding the working principle and application field of DMG1023UV-7 we can start to see how this transistor array is pushing the boundaries of electronic technology.
The specific data is subject to PDF, and the above content is for reference
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