Allicdata Part #: | DMG1026UVQ-7-ND |
Manufacturer Part#: |
DMG1026UVQ-7 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 60V 440MA SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 440mA (Ta) 650... |
DataSheet: | DMG1026UVQ-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08249 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 440mA (Ta) |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.45pC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 32pF @ 25V |
Power - Max: | 650mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
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The DMG1026UVQ-7 is an integrated circuit consisting of 6 dual N-channel enhancement mode MOSFETs, which are interlocked to form a 7 channel array. This device is a fully-differential MOSFET array designed for high package-to-package isolation. It is a versatile device that can be used in a number of applications, and its low-impedance switch interfaces will help to reduce losses and allow faster switching speeds. The DMG1026UVQ-7 is also capable of supporting a wide range of operating voltages, making it suitable for both point-of-load applications and higher voltage conditions.
The DMG1026UVQ-7 features high input impedance and fast switching times. This device is suitable for use in a range of applications, such as power switching and high-frequency switching applications. It also provides protection from voltage surges and spikes. This IC\'s 7-channel array provides an efficient and integrated switching solution for applications where high isolation is needed.
The DMG1026UVQ-7 is a monolithic power switch consisting of dual N-channel enhancement mode MOSFETs, which are connected in a Source-Follower configuration. This device is capable of providing a low on-resistance, low-loss switching across its entire operating range, making it highly efficient and reliable for both high-frequency switching and power switching applications. The DMG1026UVQ-7\'s fast switching times and high input impedance also make it an ideal choice for applications requiring high-frequency switching. This device is also suitable for use in low-voltage and high-voltage applications.
The DMG1026UVQ-7\'s working principle is based on the principles of a N-channel MOSFET. A MOSFET is a four-terminal electronic switch that is composed of a source, gate, drain and body terminals. When a voltage is applied to the gate terminal, it creates a field that allows current to flow between the source and drain. The amount of current that flows depends on the size of the gate voltage; larger gate voltages create larger fields and allow for more current to pass. By connecting multiple MOSFETs in array type configurations, larger voltage and current gains are achievable, which increase the device\'s overall performance.
In summary, the DMG1026UVQ-7 is a fully-differential MOSFET array designed for high isolation and voltage surges protection. This integrated circuit provides a low-impedance switch interface with fast switching speeds and can support a wide range of operating voltages. Its 7-channel array is capable of providing efficient and integrated switching solutions where high isolation is required. By utilizing the principles of N-channel MOSFETs, the DMG1026UVQ-7 is capable of providing a low on-resistance, low-loss switching across its entire operating range, making it highly efficient and reliable for both high-frequency switching and power switching applications.
The specific data is subject to PDF, and the above content is for reference
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