Allicdata Part #: | DMG1013T-7DITR-ND |
Manufacturer Part#: |
DMG1013T-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 0.46A SOT-523 |
More Detail: | P-Channel 20V 460mA (Ta) 270mW (Ta) Surface Mount ... |
DataSheet: | DMG1013T-7 Datasheet/PDF |
Quantity: | 42000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 270mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 59.76pF @ 16V |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 0.622nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 350mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 460mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG1013T-7 is a discrete dual gate MOSFET that is suitable for analog circuit design, especially for filtering applications. This device has a drain current of 500mA and a maximum voltage rating of 40V. It is available in three packages: SOT-23, SOT-89, and TO-92.
The working principle of this device can be illustrated using its internal structure. A single N-channel MOSFET is built on the DMG1013T-7 device. It is composed of an N-channel FET, a Gate Oxide, an Insulating Film, and a Source/Drain resistor. The internal Gate Oxide acts as a barrier between the Source and Drain, allowing the voltage applied to the Gate to control the current flow between them. The Source/Drain resistor is used to limit the current flow, providing improved drain voltage protection.
The DMG1013T-7 is ideal for use in a variety of applications. Its dual gate configuration gives it the ability to operate as either a voltage controlled amplifier or a voltage controlled attenuator. This device can be used as a preamplifier, a mixer, an amplifier, or a bandpass filter. It is also well suited for use in digital circuits, including logic gates and voltage levels shifters. Furthermore, this device can be used to replace multiple standard MOSFET transistors in certain applications, resulting in a more compact design.
Due to its dual gate configuration, the DMG1013T-7 has better control and switching capabilities compared to single gate MOSFETs. Moreover, it offers superior performance in terms of speed and efficiency. Its low capacitance values provide a better signal-to-noise ratio. Furthermore, this device\'s low resistance offers better energy efficiency. These characteristics make the DMG1013T-7 a suitable choice for various applications, especially for filtering applications.
The DMG1013T-7 is a reliable and efficient discrete MOSFET device. It offers excellent performance when used in analog and digital circuit designs. This device is capable of providing improved signal-to-noise ratio, better energy efficiency and faster switching capabilities. These characteristics make it an ideal choice for a wide range of filtering applications. With its dual gate configuration, it is easy to implement this device in circuit designs and offers superior performance.
The specific data is subject to PDF, and the above content is for reference
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