DMG1012TQ-7 Allicdata Electronics
Allicdata Part #:

DMG1012TQ-7DITR-ND

Manufacturer Part#:

DMG1012TQ-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 20V 630MA SOT523
More Detail: N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount ...
DataSheet: DMG1012TQ-7 datasheetDMG1012TQ-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single

The DMG1012TQ-7 is a single Field-Effect Transistor (FET) from Diodes Incorporated. The DMG1012TQ-7 utilises the latest of MOSFET technologies in a compact package with a maximum current drain of up to 120 amperes. The DMG1012TQ-7 is designed specifically for use in DC-DC converters, motor control, power management and other power management applications.

Applications

  • DC-DC Converters
  • Motor control
  • Power Management
  • Computer-Controlled System Power Management

Working Principle

In simple terms, the DMG1012TQ-7 works by using an electric field to cause a conductive channel to form in an insulated layer beneath the channel. When the channel is turned on, it allows current to flow through it, providing a direct pathway for the electric current from the source of power to the load. This process is known as the FET channel effect.

The DMG1012TQ-7 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed with a metal-oxide gate field-effect transistor (MOGFET) structure that enhances the charge and current flow. MOSFETs are ideal choices for applications involving switching, amplification, regulated power, and rectifying.

The DMG1012TQ-7 is ideal for use in modern DC-DC converters, serving to efficiently transmit power from the power source to the load. By allowing and controlling currents, the MOSFET accumulates more energy than it expels. This efficiently leads to higher levels of power delivery, with minimal losses in the process.

When operated as a rectifying element, the DMG1012TQ-7 enables current to flow freely in one direction, and prevents current from flowing in the opposite direction. This might be advantageous in switching circuits, where power is needed to be redirected and prevented from travelling in the wrong direction. The DMG1012TQ-7 has a blocking voltage of 400V, making it an effective choice for these applications.

Conclusion

The DMG1012TQ-7 is an ideal choice for DC-DC converters, motor control, and power management applications. The MOGFET structure enables the efficient flow of current and charge, with the MOSFET enabling the device to regulate and restrict the flow of current in one direction. The DMG1012TQ-7 is therefore a reliable and efficient choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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