Allicdata Part #: | DMG1012TQ-7DITR-ND |
Manufacturer Part#: |
DMG1012TQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 20V 630MA SOT523 |
More Detail: | N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount ... |
DataSheet: | DMG1012TQ-7 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60.67pF @ 16V |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 0.74nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 630mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
The DMG1012TQ-7 is a single Field-Effect Transistor (FET) from Diodes Incorporated. The DMG1012TQ-7 utilises the latest of MOSFET technologies in a compact package with a maximum current drain of up to 120 amperes. The DMG1012TQ-7 is designed specifically for use in DC-DC converters, motor control, power management and other power management applications.
Applications
- DC-DC Converters
- Motor control
- Power Management
- Computer-Controlled System Power Management
Working Principle
In simple terms, the DMG1012TQ-7 works by using an electric field to cause a conductive channel to form in an insulated layer beneath the channel. When the channel is turned on, it allows current to flow through it, providing a direct pathway for the electric current from the source of power to the load. This process is known as the FET channel effect.
The DMG1012TQ-7 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed with a metal-oxide gate field-effect transistor (MOGFET) structure that enhances the charge and current flow. MOSFETs are ideal choices for applications involving switching, amplification, regulated power, and rectifying.
The DMG1012TQ-7 is ideal for use in modern DC-DC converters, serving to efficiently transmit power from the power source to the load. By allowing and controlling currents, the MOSFET accumulates more energy than it expels. This efficiently leads to higher levels of power delivery, with minimal losses in the process.
When operated as a rectifying element, the DMG1012TQ-7 enables current to flow freely in one direction, and prevents current from flowing in the opposite direction. This might be advantageous in switching circuits, where power is needed to be redirected and prevented from travelling in the wrong direction. The DMG1012TQ-7 has a blocking voltage of 400V, making it an effective choice for these applications.
Conclusion
The DMG1012TQ-7 is an ideal choice for DC-DC converters, motor control, and power management applications. The MOGFET structure enables the efficient flow of current and charge, with the MOSFET enabling the device to regulate and restrict the flow of current in one direction. The DMG1012TQ-7 is therefore a reliable and efficient choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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