DMG1013UWQ-13 Allicdata Electronics
Allicdata Part #:

DMG1013UWQ-13-ND

Manufacturer Part#:

DMG1013UWQ-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET PCH 20V 820MA SOT323
More Detail: P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount ...
DataSheet: DMG1013UWQ-13 datasheetDMG1013UWQ-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03594
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMG1013UWQ-13 is a transistor specifically designed for high-frequency applications. It is a lateral DMOS (LDMOS) field-effect transistor (FET) with high-side current steering. The high-side current steering is the main feature of this transistor, making it ideal for applications with high-side switching.

A FET is a three-terminal active semiconductor device that uses a voltage to control current flow. FETs are made up of three terminal regions, called the source, drain, and gate. The gate is insulated from the other two terminals and acts as a switch that can be opened or closed via a voltage.The DMG1013UWQ-13 uses high-side current steering to ensure the transistor is easily controlled for high-frequency applications. In this device, the gate is responsible for controlling the current flow between the source and the drain. When a voltage is applied to the gate, a narrow channel is created between the source and the drain, allowing current to flow.

The DMG1013UWQ-13 is also designed to minimize power consumption. This feature is particularly useful for applications that require long-term operation. It also has a low on-resistance rating, which is essential for high-frequency applications. In addition, the low input capacitance ensures a fast switching time, making it suitable for high-speed applications.

The DMG1013UWQ-13 has several advantages over other FETs. First of all, it is capable of handling higher frequencies and higher current levels than other FETs. Additionally, it has a high-side current steering capability, making it easier to use. Furthermore, its low on-resistance allows it to be used in high-power applications. Finally, its low-input capacitance makes it suitable for high-speed operations.

The DMG1013UWQ-13 is suitable for a variety of applications, such as motor control, digital processors, and switching regulators. It can also be used for high-frequency switching and power supply applications, as well as in aerospace and defense industries. Furthermore, it is a great choice for automotive electronics, as it offers superior performance and reliability.

Overall, the DMG1013UWQ-13 is an ideal choice for high-frequency applications due to its high-side current steering and low on-resistance rating. In addition, it is capable of handling higher current levels, and its low input capacitance makes it suitable for high-speed applications. Lastly, its superior performance and reliability make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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