Allicdata Part #: | DMG1013UWQ-13-ND |
Manufacturer Part#: |
DMG1013UWQ-13 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET PCH 20V 820MA SOT323 |
More Detail: | P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount ... |
DataSheet: | DMG1013UWQ-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03594 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 59.76pF @ 16V |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 0.62nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 430mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 820mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMG1013UWQ-13 is a transistor specifically designed for high-frequency applications. It is a lateral DMOS (LDMOS) field-effect transistor (FET) with high-side current steering. The high-side current steering is the main feature of this transistor, making it ideal for applications with high-side switching.
A FET is a three-terminal active semiconductor device that uses a voltage to control current flow. FETs are made up of three terminal regions, called the source, drain, and gate. The gate is insulated from the other two terminals and acts as a switch that can be opened or closed via a voltage.The DMG1013UWQ-13 uses high-side current steering to ensure the transistor is easily controlled for high-frequency applications. In this device, the gate is responsible for controlling the current flow between the source and the drain. When a voltage is applied to the gate, a narrow channel is created between the source and the drain, allowing current to flow.
The DMG1013UWQ-13 is also designed to minimize power consumption. This feature is particularly useful for applications that require long-term operation. It also has a low on-resistance rating, which is essential for high-frequency applications. In addition, the low input capacitance ensures a fast switching time, making it suitable for high-speed applications.
The DMG1013UWQ-13 has several advantages over other FETs. First of all, it is capable of handling higher frequencies and higher current levels than other FETs. Additionally, it has a high-side current steering capability, making it easier to use. Furthermore, its low on-resistance allows it to be used in high-power applications. Finally, its low-input capacitance makes it suitable for high-speed operations.
The DMG1013UWQ-13 is suitable for a variety of applications, such as motor control, digital processors, and switching regulators. It can also be used for high-frequency switching and power supply applications, as well as in aerospace and defense industries. Furthermore, it is a great choice for automotive electronics, as it offers superior performance and reliability.
Overall, the DMG1013UWQ-13 is an ideal choice for high-frequency applications due to its high-side current steering and low on-resistance rating. In addition, it is capable of handling higher current levels, and its low input capacitance makes it suitable for high-speed applications. Lastly, its superior performance and reliability make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DMG1016V-7 | Diodes Incor... | -- | 1000 | MOSFET N/P-CH 20V SOT563M... |
DMG1023UV-7 | Diodes Incor... | -- | 1000 | MOSFET 2P-CH 20V 1.03A SO... |
DMG1029SV-7 | Diodes Incor... | -- | 9000 | MOSFET N/P-CH 60V SOT563M... |
DMG1016UDW-7 | Diodes Incor... | -- | 1000 | MOSFET N/P-CH 20V SOT363M... |
DMG1013UWQ-7 | Diodes Incor... | -- | 3000 | MOSFET P-CH 20V 0.82A SOT... |
DMG1012T-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 20V 630MA SOT... |
DMG1012TQ-7 | Diodes Incor... | -- | 3000 | MOSFET NCH 20V 630MA SOT5... |
DMG1026UV-7 | Diodes Incor... | -- | 114000 | MOSFET 2N-CH 60V 0.41A SO... |
DMG1016VQ-7 | Diodes Incor... | 0.13 $ | 1000 | MOSFET N/P-CH 20V SOT563M... |
DMG1026UVQ-7 | Diodes Incor... | 0.09 $ | 1000 | MOSFET 2 N-CH 60V 440MA S... |
DMG1016VQ-13 | Diodes Incor... | 0.12 $ | 1000 | MOSFET N/P-CH 20V SOT563M... |
DMG1013T-7 | Diodes Incor... | -- | 42000 | MOSFET P-CH 20V 0.46A SOT... |
DMG1013UW-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 20V 820MA SOT... |
DMG1012UW-7 | Diodes Incor... | -- | 173224 | MOSFET N-CH 20V 1A SOT323... |
DMG1013UWQ-13 | Diodes Incor... | 0.04 $ | 1000 | MOSFET PCH 20V 820MA SOT3... |
DMG1013TQ-7 | Diodes Incor... | -- | 1000 | MOSFET P-CH 20V 460MA SOT... |
DMG10N60SCT | Diodes Incor... | 0.97 $ | 1000 | MOSFET N-CH 600V 12A TO22... |
DMG1553-1 | PulseR | 19.12 $ | 1000 | TRANSFORMER PBC |
DMG1553-2 | PulseR | 19.12 $ | 1000 | TRANSFORMER PBC |
DMG1553-3 | PulseR | 19.12 $ | 1000 | TRANSFORMER PBC |
DMG1553-45 | PulseR | 19.12 $ | 1000 | TRANSFORMER PBC |
DMG1553-5 | PulseR | 19.12 $ | 1000 | TRANSFORMER PBC |
DMG1024UV-7 | Diodes Incor... | -- | 1000 | MOSFET 2N-CH 20V 1.38A SO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...