DMG1016VQ-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	870mA, 640mA
Rds On (Max) @ Id, Vgs:	400 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	60.67pF @ 16V
Power - Max:	530mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

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IntroductionThe DMG1016VQ-7 is a high-performance, monolithic Gallium Arsenide Field-Effect-Transistor (GaAs FET), which has been developed as a highly integrated device offering a rich array of useful features and a wide package outline. This device is well suited for demanding applications such as radio-frequency (RF) power amplifiers, broadband amplifiers and active filters. The DMG1016VQ-7 operates in both positive and negative bias voltages, and can operate from 1 to 10V. It also provides low capacitive coupling, high gain, and excellent linearity performance.Basic DescriptionThe DMG1016VQ-7 consists of oneof eight discrete GaAs FETs, each featuring an intrinsically low drain-to-source impedance, a high Cmss capacitance,and two adjustable voltage-dependent capacitors. The drain current is proportional to the supply voltage and to the gate voltage. The device is also able to be operated in the triode region in order to achieve high linearity with reduction of total harmonic distortion (THD) and improved efficiency.Application FieldThe DMG1016VQ-7 is most often used in RF power amplifiers, broadband amplifiers and active filters. It is well-suited for multiplexing applications, such as in Global System for Mobile Communications (GSM) base station amplifiers and other RF power amplifiers. This device enables smooth and significant increases in power efficiency, improved linearity performance and increased frequency bandwidth. As such, it is ideal for RF communications, cellular communications, and microwave systems.Working PrincipleThe DMG1016VQ-7 works by using a voltage-dependent gate wherein the electric field causes electrons to move from the source to the drain electrode. This effect is then multiplied by the gate-drain capacitance which is inversely proportional to the applied voltage. Therefore, the drain current is directly proportional to the supply voltage and the gate voltage. When the gate voltage increases, the drain current increases, resulting in better performance and efficiency in the application. ConclusionIn conclusion, the DMG1016VQ-7 is a high-performance GaAs FET array, which is well-suited for multiplexing applications. It offers a rich set of features including high gain, low capacitive coupling, and excellent linearity performance. This device is very well suited for use in radio-frequency (RF) power amplifiers, broadband amplifiers and active filters.

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